SPP07N60C3XKSA1

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The SPP07N60C3XKSA1 is a N-Channel enhancement mode power MOSFET with a high-temperature draining, low on-state resistance, and lightning transient electrical characteristics. By fully taking advantage of its advanced cell technology, this MOSFET offers the highest performance in all the usual applications, while providing superior low R_DS(ON).

The SPP07N60C3XKSA1 belongs to a family of power MOSFETs that use low-voltage N-channel construction. This device has a fast switching speed, as well as a wide input and output voltage range, which make it suitable for a variety of applications. It also features excellent gate charge characteristics, which makes it well-suited for high-frequency switching application. This device offers superior thermal and trigger stable performance, making it a useful choice for various power supply circuit and power switching applications.

Applications for the SPP07N60C3XKSA1 power MOSFET include switching power supplies, regulated power supplies, dynamic load switches, and ac/dc converters. It is also widely used in lighting control, electric motor drives, and intelligent control system circuits. This device is also well-suited for digital circuits and analog applications such as PC and peripheral equipment, audio power amplifiers, and home appliances.

The working principle of the SPP07N60C3XKSA1 is based on the electrical characteristics and performance of the MOSFET components. This device is an enhancement-type MOSFET and works on the principle of bidirectional conduction by allowing both electrons and holes to flow through the channel. In this device, the gate electrode is insulated from the drain and source electrode by a thin gate oxide layer, forming a semiconductor channel. When a voltage is applied across the source and gate electrode, a depletion layer is formed which increases the resistance between the source and drain electrode. This reduces the conduction current and forms a voltage-controlled resistance across the channel, thereby controlling the power supply.

The SPP07N60C3XKSA1 is also designed with a high-current carrying capacity. The device has a high drain-source on-state resistance of typically 7mΩ, a drain-to-source breakdown voltage of 60V, and a continuous drain current of 488A. It also offers a fast switching speed, with a reverse transfer capacitance (C_dg) of 4.9pF and a gate-source turn-on voltage (V_gs) of 0.45V. The device also operates at a temperature range of -55°C up to 175°C and is rated for a total power dissipation of 385W.

The SPP07N60C3XKSA1 power MOSFET from SAFER Electronics is an ideal choice for high-temperature applications that require high drain-to-source current switching, low R_DS(ON) and fast switching speed. This device offers superior thermal and trigger stable performance, making it well-suited for use in lighting control, electric motor drives, digital circuits and analog applications.

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