Allicdata Part #: | IRF7324-ND |
Manufacturer Part#: |
IRF7324 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 20V 9A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 9A 2W Surface ... |
DataSheet: | IRF7324 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 9A |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 9A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 2940pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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IRF7324, produced by International Rectifier, is a dual power MOSFET array that belongs to the family of high-power, high-voltage MOSFET arrays. It is used in high power applications such as power converters, DC/DC converters, motor control, and various other power electronic applications. It is a highly efficient device that offers lower on-state resistance and superior figures of merit than conventional discrete power MOSFETs.
IRF7324 Application Field and Working Principle
IRF7324 is especially well suited for use in switching power supplies, DC/DC converters, motor control, and high power applications. The device consists of two power MOSFETs in a single package. Its capability to switch large amounts of power at high frequencies makes it an ideal device for high frequency inverters, motor control, and motor drives. The MOSFETs have an on-state resistance of 8 mΩ (typical) and a maximum drain current of 120 A. In addition, the device is available in integrated circuits with built-in protection features such as short circuit protection and over-temperature protection.
The IRF7324 operates on the principle of field-effect transistors (FETs). FETs are semiconductor devices that utilize an electric field to control the flow of current. In a MOSFET, the electric field is generated by the gate-source voltage. The gate-source voltage changes the user of channel current and thereby the flow of channel current.
MOSFETs are made up of three terminals, the gate, the source, and the drain. When a voltage is applied to the gate, it creates an electric field which attracts charge carriers (electrons or holes) from the source region to the drain region. This forms a conducting channel between the source and the drain, allowing current to flow. The MOSFET arrays, like the IRF7324, have multiple MOSFETs in a single package with each individual MOSFET sharing the same gate input. This allows the device to switch high amounts of power.
The IRF7324 is an ideal device for applications such as power converters, DC/DC converters, motor control, and various other power electronic applications. It has an on-state resistance of 8 mΩ (typical) and a maximum drain current of 120 A, giving it high efficiency, low on-state resistance, and superior figures of merit compared to traditional discrete power MOSFETs. The device is also available in integrated circuits with built-in protection features that are designed to protect the device against short circuits and over-temperature conditions.
The specific data is subject to PDF, and the above content is for reference
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