Allicdata Part #: | IRFU3704-ND |
Manufacturer Part#: |
IRFU3704 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 75A I-PAK |
More Detail: | N-Channel 20V 75A (Tc) 90W (Tc) Through Hole IPAK ... |
DataSheet: | IRFU3704 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1996pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFU3704 is a single transistors with metal-oxide-semiconductor field-effect transistor (MOSFET) technology. It is part ofa wide selection of components manufactured by International Rectifier. The IRFU3704 is a N-channel enhancementmode MOSFET. It is an ideal solution for power supply design and systemlevel applications.
This component uses MOSFET technology for the switching, switching the channel in an OFF state before the drain tosource, providing high efficiency, low on-state resistance, and broad gate to source voltage (VGS) ranges. This canmake it applicable to a wide range of load applications such as audio, wireless telecommunications, and solidstate lighting. In applications where temperature and voltage need to be precisely controlled, the IRFU3704 offers fullW curves and reduced gate capacitance, enabling high switching speeds.
The typical features of the IRFU3704 include: N-channel Enhancement-Mode MOSFET, 20V Drain Source Voltage,11V Gate Source Voltages, 0.018A Maximum Continuous Drain Current, 21A (Ipp) Pulse Drain Current, 5A MaximumPulsed Gate Current, 0.013Ohm Maximum Drain Source On Resistance(RDS), Aluminum nitride technology.
It has simple principle in which MOSFETs operate and it is based on the characteristics of Semiconductor and Voltage. When applying a voltage to the gate of the MOSFET, it creates an inversion layer in the SiO2 surrounding the gate which acts as an electric field. This electric field controls the flow of charge between the drain and source. This is made possible by the fact that the electron mobility in the source and drain regions is much higher than in the oxide layer.
The IRFU3704 provides the user with a very efficient and high power solution. Due to its advanced process and performance, it facilitates to design uniform power devices with low power consumption over a wide range of applications. It helps maintain optimal switching performance with narrow deviation over temperature and voltage. It is also capable ofwithstanding voltage transients, making it suitable for application in systems such as battery-powered devices.
The IRFU3704 can be applied in a variety of applications such as power supplies, signal-integrity systems, audio amplifiers and video amplifiers, instrumentation control, battery monitoring and charging systems, communications equipment, IT system level applications and wireless communications. It offers an excellent solution for sensitive switching applications.
The IRFU3704 can be used in various applications in order to produce different types of signals and is best used in applications where power must be controlled and maintained or adapted as required. It is an advanced solution for SMPS, VDSL2, and switching power applications. It provides excellent performance over temperature and voltage range so that it could fulfill the exacting requirements of SMPS, mobile device and system-level applications. The IRFU3704 provides the user with the ability to design efficient power systems by minimizing power loss, reducing heat generated and maintaining accurate system voltage functionality.
The specific data is subject to PDF, and the above content is for reference
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