Vgs(th) (Max) @ Id:	2V @ 11µA
Base Part Number:	BSL306
Supplier Device Package:	PG-TSOP6-6
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	500mW
Input Capacitance (Ciss) (Max) @ Vds:	275pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:	1.6nC @ 5V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	57 mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C:	2.3A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BSL306NL6327HTSA1 Application Field and Working Principle

Transistors - FETs, MOSFETs - Arrays

BSL306NL6327HTSA1 is a high voltage N-channel trench Gate MOSFET array which is produced by Infineon. It is equipped with four N-channel MOSFETs. Each FETs has four SRs which are connected in series and two source/drain terminal pins. This MOSFET array provides effective thermal heat dissipation and wide drive options with low gate charge.

Applications

BSL306NL6327HTSA1 can be used in a variety of applications. It is often used in ballast circuits, solid-state lighting, and lighting products due to its low gate charge and low on-state resistance. It can also be used in automotive applications, machinery and home appliances such as compact fluorescent lights, LED lighting, motor control, soft starters, as well as AC adapters and power supplies.

Working Principle

The working principle of BSL306NL6327HTSA1 works by releasing electrons from the gate of the MOSFET in order to create a channel. This channel acts as a conductor between the source and the drain. When the power supply is applied, the voltage across the channel will be the same as the voltage applied to the gate and the drain is turned “on”. This allows current to pass through the channel, which is how the MOSFET is able to regulate the amount of current.The BSL306NL6327HTSA1 is a bidirectional MOSFET, which means it can be used as a switch or an amplifier. In order to use it as a switch, the gate terminal must be connected to the source or drain terminal. When it is used as an amplifier, the gate terminal should be connected to a source of voltage which can be used to control the amount of current which passes through the device.

Conclusion

The BSL306NL6327HTSA1 is a high voltage N-Channel trench Gate MOSFET array. It is designed with four N-Channel MOSFETs which have four SRs that are connected in series. This MOSFET array provides effective thermal heat dissipation and wide drive options with low gate charge. It can be used in a wide range of applications from lighting products and motor control to AC adapters and power supplies. The working principle of the BSL306NL6327HTSA1 is by releasing electrons from the gate of the MOSFET in order to create a channel which will control the amount of current that passes through the device.

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