Parallel interface ic - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
MT29F1G08ABAEAH 4-ITX:E-ND	MT29F1G08ABAEAH 4-ITX:E	Micron Technology Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11) Base Part Number: MT29F1G08	1000 Order	1+: $0
MT29F1G08ABBEAH C-IT:E-ND	MT29F1G08ABBEAH C-IT:E	Micron Technology Inc.	View more Packaging: Bulk Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (10.5x13) Base Part Number: MT29F1G08	1000 Order	1+: $0
MT29F8G08ABACAH 4-IT:C-ND	MT29F8G08ABACAH 4-IT:C	Micron Technology Inc.	View more Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11) Base Part Number: MT29F8G08	1000 Order	--
EDFA164A2PM-JDT J-F-D-ND	EDFA164A2PM-JDT J-F-D	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Clock Frequency: 933MHz Memory Interface: Parallel Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
MT29F128G08CFAB BWP-12IT:BTR-ND	MT29F128G08CFAB BWP-12IT:B TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Clock Frequency: 83MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
MT29F256G08AMEB BK7-12:BTR-ND	MT29F256G08AMEB BK7-12:B TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Clock Frequency: 83MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
MT29F3T08EQCBBG 2-37ES:BTR-ND	MT29F3T08EQCBBG 2-37ES:B TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 3Tb (384G x 8) Clock Frequency: 267MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
EDFA232A2PB-GD- F-RTR-ND	EDFA232A2PB-GD- F-R TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (512M x 32) Clock Frequency: 800MHz Memory Interface: Parallel Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
MT29F1T08CQCCBG 2-6R:C-ND	MT29F1T08CQCCBG 2-6R:C	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Clock Frequency: 167MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
S29WS256RAABHW0 00-ND	S29WS256RAABHW0 00	Cypress Semiconductor Corp	View more Series: WS-R Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Clock Frequency: 104MHz Write Cycle Time - Word, Page: 60ns Access Time: 80ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25C ~ 85C (TA)	1000 Order	1+: $0
W632GU8AB-15-ND	W632GU8AB-15	Winbond Electronics	View more Part Status: Discontinued at Digi-Key Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Clock Frequency: 667MHz Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0C ~ 95C (TC)	1000 Order	1+: $0
IS49NLS18160-25 WBLI-ND	IS49NLS18160-25 WBLI	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 288Mb (16M x 18) Clock Frequency: 400MHz Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
MT61K256M32JE-1 3:ATR-ND	MT61K256M32JE-1 3:A TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR6 Memory Size: 8Gb (256M x 32) Clock Frequency: 1.625GHz Memory Interface: Parallel Voltage - Supply: 1.31 V ~ 1.39 V Operating Temperature: 0C ~ 95C (TC)	1000 Order	1+: $0
AT27C512R-70PU- ND	AT27C512R-70PU	Microchip Technology	View more Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP Base Part Number: AT27C512	21187 Order	--
1274-1016-ND	S29GL01GS10TFI0 10	Cypress Semiconductor Corp	View more Series: GL-S Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (64M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 100ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	1331 Order	--
AT28HC256-12JU- ND	AT28HC256-12JU	Microchip Technology	View more Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Write Cycle Time - Word, Page: 10ms Access Time: 120ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC Base Part Number: AT28HC256	355 Order	--
428-4254-ND	S34ML02G200BHI5 00	Cypress Semiconductor Corp	View more Series: ML-2 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	497 Order	1+: $5.7393
SST39VF400A-70- 4C-MAQE-ND	SST39VF400A-70- 4C-MAQE	Microchip Technology	View more Series: SST39 MPF Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (256K x 16) Write Cycle Time - Word, Page: 20s Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 48-WFBGA Supplier Device Package: 48-WFBGA (6x4) Base Part Number: SST39VF400A	735 Order	1+: $1.1781 25+: $1.0836 100+: $0.9149
S34ML08G101BHB0 00-ND	S34ML08G101BHB0 00	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, ML-1 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	426 Order	1+: $18.4086 10+: $17.3036 25+: $16.7089 50+: $16.178 210+: $14.2354 420+: $14.1186
1450-1049-ND	AS7C256A-12JCN	Alliance Memory, Inc.	View more Packaging: Tube Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Write Cycle Time - Word, Page: 12ns Access Time: 12ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	77 Order	1+: $1.1277 10+: $1.0301 25+: $1.003 50+: $0.9975 100+: $0.8917 250+: $0.8891 500+: $0.8758 1000+: $0.8383 5000+: $0.7806
SST39VF1601C-70 -4I-B3KE-ND	SST39VF1601C-70 -4I-B3KE	Microchip Technology	View more Series: SST39 MPF Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (1M x 16) Write Cycle Time - Word, Page: 10s Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8) Base Part Number: SST39VF1601C	960 Order	--
AT28C010-12JU-0 76-ND	AT28C010-12JU-0 76	Microchip Technology	View more Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 10ms Access Time: 120ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	32 Order	1+: $21.42 25+: $20.6221
428-3621-ND	S29GL512T11TFIV 20	Cypress Semiconductor Corp	View more Series: GL-T Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Write Cycle Time - Word, Page: 60ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	168 Order	1+: $5.4558
S29GL256P11TFI0 20-ND	S29GL256P11TFI0 20	Cypress Semiconductor Corp	View more Series: GL-P Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	1000 Order	--
R1LV5256ESP-5SI #B0-ND	R1LV5256ESP-5SI #B0	Renesas Electronics America	View more Packaging: Tube Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 256Kb (32K x 8) Write Cycle Time - Word, Page: 55ns Access Time: 55ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.330", 8.38mm Width) Supplier Device Package: 28-SOP Base Part Number: R1LV5256E	317 Order	1+: $4.3722 10+: $3.9911 25+: $3.9151 50+: $3.8882 100+: $3.4879 250+: $3.4746
MSM5118160F60T- ND	MSM5118160F-60T 3K-MT	ROHM Semiconductor	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 16Mb (1M x 16) Access Time: 30ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Base Part Number: MSM5*	5167 Order	1+: $6.2307
1274-1071-ND	S29GL256S90TFI0 20	Cypress Semiconductor Corp	View more Series: GL-S Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 90ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	26 Order	--
IS61WV6416EEBLL -10TLI-TR-ND	IS61WV6416EEBLL -10TLI-TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Write Cycle Time - Word, Page: 10ns Access Time: 10ns Memory Interface: Parallel Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP2	1000 Order	1000+: $0.7335
AS4C4M16SA-7B2C NTR-ND	AS4C4M16SA-7B2C NTR	Alliance Memory, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Clock Frequency: 143MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.4ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-FBGA	1000 Order	2000+: $1.0189
AS7C31025B-15JC N-ND	AS7C31025B-15JC N	Alliance Memory, Inc.	View more Packaging: Tube Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 15ns Access Time: 15ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	1000 Order	210+: $1.4842 252+: $1.436 504+: $1.4306 1008+: $1.3324 5019+: $1.2056
AS7C1026B-20JCN TR-ND	AS7C1026B-20JCN TR	Alliance Memory, Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Write Cycle Time - Word, Page: 20ns Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	1000 Order	1000+: $1.6012
AS7C31025B-20TJ CN-ND	AS7C31025B-20TJ CN	Alliance Memory, Inc.	View more Packaging: Tube Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 20ns Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 32-SOJ	1000 Order	220+: $1.7019 264+: $1.6956 506+: $1.6331 1012+: $1.5527
AS7C34096A-15JI N-ND	AS7C34096A-15JI N	Alliance Memory, Inc.	View more Packaging: Tube Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Write Cycle Time - Word, Page: 15ns Access Time: 15ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 36-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 36-SOJ	1000 Order	190+: $2.606 266+: $2.5963 513+: $2.5007 1007+: $2.3775
S34ML02G100BHB0 03-ND	S34ML02G100BHB0 03	Cypress Semiconductor Corp	View more Series: ML-1 Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	1000 Order	2300+: $5.5366
S34ML02G100BHB0 00-ND	S34ML02G100BHB0 00	Cypress Semiconductor Corp	View more Series: ML-1 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	1000 Order	210+: $6.351
S29GL512S12TFBV 20-ND	S29GL512S12TFBV 20	Cypress Semiconductor Corp	View more Series: GL-S Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 120ns Memory Interface: Parallel Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	1000 Order	91+: $6.8494
7164S45DB-ND	7164S45DB	IDT, Integrated Device Technology Inc	View more Packaging: Tube Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Kb (8K x 8) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55C ~ 125C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CerDip	1000 Order	169+: $11.5505
CY7C1371KV33-10 0AXCT-ND	CY7C1371KV33-10 0AXCT	Cypress Semiconductor Corp	View more Series: NoBL Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Clock Frequency: 100MHz Access Time: 8.5ns Memory Interface: Parallel Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	750+: $13.2193
AT28C256E-25LM8 83-ND	AT28C256E-25LM/ 883	Microchip Technology	View more Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Write Cycle Time - Word, Page: 10ms Access Time: 250ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55C ~ 125C (TC) Mounting Type: Surface Mount Package / Case: 32-CLCC Supplier Device Package: 32-LCC (11.43x13.97) Base Part Number: AT28C256	1000 Order	34+: $66.1884
AT29C020-12JC-N D	AT29C020-12JC	Microchip Technology	View more Packaging: Tube Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Write Cycle Time - Word, Page: 10ms Access Time: 120ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC Base Part Number: AT29C020	1000 Order	--

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