S34ML02G100BHB003 Allicdata Electronics
Allicdata Part #:

S34ML02G100BHB003-ND

Manufacturer Part#:

S34ML02G100BHB003

Price: $ 6.09
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 6...
DataSheet: S34ML02G100BHB003 datasheetS34ML02G100BHB003 Datasheet/PDF
Quantity: 1000
2300 +: $ 5.53661
Stock 1000Can Ship Immediately
$ 6.09
Specifications
Series: ML-1
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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S34ML02G100BHB003 is a type of memory flash, which belongs to the density grade of two giga serial Flash. It is specially designed for low-cost and low-power serial flash applications.

The memory flash has a wide range of applications. It is mainly designed for microcontrollers and other embedded components that have low power and cost requirements, and can meet the need for non-volatile memory of both data and code. It is also suitable for use in portable or mobile applications that require low power consumption, such as MP3 players, point of sale terminals, and hand-held printers.

In addition, the memory flash can also be used in a series of smart cards (such as high end SIM cards, government ID cards and high security credit cards). In addition, it can also be used in tablets and mobile phones. Further, it is also suitable for digital certificates, digital rights management, logical access authentication and key storage in banking and security applications.

In terms of its working principle, when data needs to be written to the memory flash chip, the data will be written to the page of the flash memory cell. Then, the memory controller would detect the page to be written, and will select a program/erase cycle to program the page. Generally, the write process of the memory flash chip is like this.

At first, the memory controller will try to read the flash memory cell with the matching address of the specified data. If the content stored in the memory cell is not the same as the data content that needs to be written, then the memory controller will issue an erase command, and will erase all the data in the specified page. Then, the program command will be issued to write the stored data into the flash memory cell. After that, the memory controller will read the flash memory cell again to verify whether the data has been stored successfully to the memory cell. If the verification is completed, the program process will end.

In summary, the S34ML02G100BHB003 is a low cost and low power memory flash with a wide range of applications in low power and cost conscious applications like microcontrollers, smartphones, tablets, smart cards, digital certificates and digital rights management, logical access authentication and key storage in banking and security applications. Its working principle is based on the read-erase-program cycle of the memory cell, which ensures that the data written to the memory flash is accurate and reliable.

The specific data is subject to PDF, and the above content is for reference

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