SST39VF1601C-70-4I-B3KE

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory

The SST39VF1601C-70-4I-B3KE is a 3.3V 16Mbit Flash Memory device, with 4 banks in the industry standard TSOP package. With an operating frequency of 70Mhz, the device features a 70nsecond access time making it one of the fastest devices in the market. Utilizing a 4-byte sector architecture, the device offers maximum flexibility and scalability for upgrading applications without the need for replacing the device.

The SST39VF1601C-70-4I-B3KE is an ideal solution for high performance, multi-application digital systems. It is used in applications such as digital photo imaging, cellular phones, audio players, security and data tracking systems, digital video systems, medical equipment and point-of-sale devices. The device features a low power CMOS process, providing unmatched endurance and reliability, making the SST39VF1601C-70-4I-B3KE an ideal solution for applications with stringent space and power requirements.

SST39VF1601C-70-4I-B3KE working principle is based on the use of mechanisms for storing information in cells. It utilizes the concept of floating gates and charge traps, also known as cells or transistors, to store data. A floating gate is a thin layer of material that acts as an insulating barrier between the source and drain of a transistor that can hold a charge. This stored charge then acts as a bit in digital memory. The charge trap is a transistor that stores charge and is used as a storage element. By controlling the gate supply voltage and changing the charge on the gates, digital data can be written to the memory.

In order to access the stored data, the current state of each cell must be read and decoded. When the voltage applied to a cell is high, the cell\'s gate is charged and the memory assumes the “1” state. When the applied voltage is low, the cell\'s gate is not charged and the memory assumes the “0” state. The SST39VF1601C-70-4I-B3KE allows for the random access of individual cells, allowing for faster and more reliable data transfer. The device also features an advanced error correction system, which ensures the integrity of the stored data.

By using an advanced CMOS process, the SST39VF1601C-70-4I-B3KE provides excellent signal integrity and low power consumption. Ideal for high-traffic and industrial environments, the device has proven its reliability and resilience over the years. With its superiority in performance, scalability and reliability, the SST39VF1601C-70-4I-B3KE makes an ideal choice for today’s digital systems.

The specific data is subject to PDF, and the above content is for reference