S29WS256RAABHW000

Series:	WS-R
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	256Mb (16M x 16)
Clock Frequency:	104MHz
Write Cycle Time - Word, Page:	60ns
Access Time:	80ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-25°C ~ 85°C (TA)

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IntroductionThe S29WS256RAABHW000 (S29WS256RAABHW000 for short) is a type of memory, a widely used storage device in computers, digital devices, and other electronics. It is a powerful type of memory, with high capacity and fast data transfer speed. In this article, we will look at the application field and working principle of S29WS256RAABHW000.Application FieldThe S29WS256RAABHW000 is widely used in consumer electronic products such as cameras, portable media players, and handheld devices. It can also be used in devices such as memory sticks, USB flash drives, and mobile phones. The S29WS256RAABHW000 offers a number of features which make it particularly suited to these applications.Firstly, its data transfer speed is fast. It offers a peak data transfer speed of 600MHz, making it ideal for applications which require quick data transfer. Secondly, it is a very reliable type of memory, with minimal chances of data corruption or loss. Thirdly, the S29WS256RAABHW000 provides high capacity. It can store up to 32 gigabytes of data, making it suitable for applications which require large amounts of storage. Finally, it is very energy efficient, allowing it to be used in battery-powered applications.Working PrincipleThe S29WS256RAABHW000 is a type of non-volatile memory, meaning that the data stored in it is preserved even when power is removed. It uses a specific type of technology to achieve this, known as floating-gate non-volatile memory.This technology works by using two transistors, known as "floating-gate transistors". These transistors are connected in series, with one transistor connected to a voltage source, and the other transistor connected to ground. When the voltage applied to the first transistor is higher than the voltage applied to the second transistor, charge will flow from the voltage source to the second transistor, and the data stored in the memory is preserved. When the voltage is reversed, the charge will flow back to the voltage source, and the data stored in the memory will be erased.ConclusionThe S29WS256RAABHW000 is a type of memory, widely used in consumer electronic products such as cameras, portable media players, and handheld devices. It offers high capacity, fast data transfer speed, reliability, and energy efficiency. It is a type of non-volatile memory, using floating-gate non-volatile memory technology to store and preserve data even when power is removed.

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