MT29F1G08ABBEAHC-IT:E Allicdata Electronics
Allicdata Part #:

MT29F1G08ABBEAHC-IT:E-ND

Manufacturer Part#:

MT29F1G08ABBEAHC-IT:E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 6...
DataSheet: MT29F1G08ABBEAHC-IT:E datasheetMT29F1G08ABBEAHC-IT:E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (10.5x13)
Base Part Number: MT29F1G08
Description

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MT29F1G08ABBEAHC-IT:E is a type of memory which is used extensively in consumer electronics and in other types of electronics. It has many characteristics which make it suitable for a variety of applications. This article will look at the application field of MT29F1G08ABBEAHC-IT:E and its working principle.

Applications of MT29F1G08ABBEAHC-IT:E Memory

MT29F1G08ABBEAHC-IT:E memory is used in a wide range of consumer electronics and other applications. The main application of this memory is in mobile phones, tablets and gaming consoles. It is also commonly used in digital cameras, PDAs, digital audio players and other portable devices. Additionally, it is also used in automotive systems, industrial electronics, medical electronics and embedded systems.

MT29F1G08ABBEAHC-IT:E memory is highly configurable and has fast read and write times. This makes it suitable for applications that require rapid read/write times such as gaming consoles and digital cameras. It is also widely used in automotive systems as it has a high temperature tolerance and can operate reliably in extreme temperatures.

MT29F1G08ABBEAHC-IT:E memory is also used for storage of data such as audio or video files. It is often used in digital audio players, digital cameras and portable media players as a form of mass storage. It is also used in industrial applications such as robots, factory automation and machine control systems.

Working Principle of MT29F1G08ABBEAHC-IT:E Memory

MT29F1G08ABBEAHC-IT:E memory is a multi-level cell (MLC) flash memory. It is a non-volatile memory, meaning that it stores data even if power is lost. The memory cell consists of two transistors and two capacitors that store multiple data states. The number of data states can be adjusted, depending on the application requirements. Faster read/write speeds are achieved by switching between voltage levels.

When a write operation is performed, the bitlines of the memory cell are charged to a specific voltage. This is done by applying either a high or low voltage level to the bitline. This causes the transistor connected to the bitline to switch states. This process is used to write data onto the memory cell.

When a read operation is performed, the transistor is used to detect the voltage level on the bitline. This voltage level corresponds to the data that is stored in the memory cell. By detecting the voltage level, the memory cell can determine which state it is currently in and can therefore read data from the cell.

The MT29F1G08ABBEAHC-IT:E memory is reliable, fast and can operate in extreme temperatures. This makes it a great solution for a wide range of applications. It is used in everything from mobile phones to industrial automation systems.

The specific data is subject to PDF, and the above content is for reference

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