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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
MM3Z2V7CTR-ND	MM3Z2V7C	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 2.7V Tolerance: 5% Power - Max: 200mW Impedance (Max) (Zzt): 94 Ohms Current - Reverse Leakage @ Vr: 18A @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65C ~ 150C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Base Part Number: MM3Z2V7	18000 Order	3000+: $0.0236 6000+: $0.0205 15000+: $0.0174 30000+: $0.0164 75000+: $0.0154 150000+: $0.0137
SZBZX84B15LT1GO STR-ND	SZBZX84B15LT1G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 15V Power - Max: 225mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 50nA @ 10.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	6000 Order	--
NVTFS5124PLWFTW G-ND	NVTFS5124PLWFTW G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 260 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Power Dissipation (Max): 3W (Ta), 18W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	1000 Order	5000+: $0.1628
FGH50N6S2D-ND	FGH50N6S2D	ON Semiconductor	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 463W Switching Energy: 260J (on), 250J (off) Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25C: 13ns/55ns Test Condition: 390V, 30A, 3 Ohm, 15V Reverse Recovery Time (trr): 55ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	1000 Order	--
SZMM5Z6V8T1GOST R-ND	SZMM5Z6V8T1G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 6.8V Tolerance: 6% Power - Max: 500mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 2A @ 4V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65C ~ 150C Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Base Part Number: MM5Z6V8	3000 Order	3000+: $0.0595 6000+: $0.0562 15000+: $0.0513 30000+: $0.048
NDC651NTR-ND	NDC651N	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	--
SGR15N40LTM-ND	SGR15N40LTM	ON Semiconductor	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector Pulsed (Icm): 130A Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 130A Power - Max: 45W Input Type: Standard Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	1000 Order	1+: $0
FQI6N15TU-ND	FQI6N15TU	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 6.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power Dissipation (Max): 3.75W (Ta), 63W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
FQPF17N08L-ND	FQPF17N08L	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 11.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
FDW264P-ND	FDW264P	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 135nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 7225pF @ 10V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	1000 Order	--
FQB3P50TM-ND	FQB3P50TM	ON Semiconductor	View more Series: QFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1.35A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
FQI27P06TU-ND	FQI27P06TU	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70 mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
FQPF3N90-ND	FQPF3N90	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 1.05A, 10V Vgs(th) (Max) @ Id: 5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Power Dissipation (Max): 43W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	1000 Order	--
FQH140N10-ND	FQH140N10	ON Semiconductor	View more Series: QFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	--
1N5931BRLGOSTR- ND	1N5931BRLG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 18V Tolerance: 5% Power - Max: 3W Impedance (Max) (Zzt): 12 Ohms Current - Reverse Leakage @ Vr: 1A @ 13.7V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA Operating Temperature: -65C ~ 200C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Base Part Number: 1N5931	6000 Order	--
DF08S1TR-ND	DF08S1	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 3A @ 800V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-SDIP	3000 Order	1500+: $0.1197 3000+: $0.1092 7500+: $0.1021 10500+: $0.0951 37500+: $0.0902
MBR30H100CTGOS- ND	MBR30H100CTG	ON Semiconductor	View more Series: SWITCHMODE Packaging: Tube Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 800mV @ 15A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 4.5A @ 100V Operating Temperature - Junction: 175C (Max) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Base Part Number: MBR30H100CT	5011 Order	--
MBRD835LT4GOSTR -ND	MBRD835LT4G	ON Semiconductor	View more Series: SWITCHMODE Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 510mV @ 8A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 1.4mA @ 35V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -65C ~ 150C Base Part Number: MBRD835	45000 Order	--
FFPF15S60STU-ND	FFPF15S60STU	ON Semiconductor	View more Series: Stealth Packaging: Tube Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 15A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 100A @ 600V Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65C ~ 150C	550 Order	--
1N5366BRLGOSTR- ND	1N5366BRLG	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 39V Tolerance: 5% Power - Max: 5W Impedance (Max) (Zzt): 14 Ohms Current - Reverse Leakage @ Vr: 500nA @ 29.7V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Operating Temperature: -65C ~ 200C Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: Axial Base Part Number: 1N5366	1000 Order	--
NTD4302-1G-ND	NTD4302-1G	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
NTHD3101FT3G-ND	NTHD3101FT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET Package / Case: 8-SMD, Flat Lead	1000 Order	1+: $0
NTD4810NH-1G-ND	NTD4810NH-1G	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 12V Power Dissipation (Max): 1.28W (Ta), 50W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
MM3Z2V4T1GOSTR- ND	MM3Z2V4T1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 2.4V Tolerance: 8% Power - Max: 300mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 50A @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65C ~ 150C Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Base Part Number: MM3Z2V4	30000 Order	3000+: $0.0169 6000+: $0.0152 15000+: $0.0132 30000+: $0.0119 75000+: $0.0106 150000+: $0.0088
FDV304P_NB8U003 -ND	FDV304P_NB8U003	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 460mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Vgs (Max): -8V Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
MURS260T3GOSTR- ND	MURS260T3G	ON Semiconductor	View more Series: MURS260 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Type: Fast Recovery Rectifiers Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 2A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5A @ 600V Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature: -65C ~ 175C Operating Temperature - Junction: -65C ~ 175C Base Part Number: MURS260	39984 Order	--
IRFR120ATM-ND	IRFR120ATM	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
MR854GOS-ND	MR854G	ON Semiconductor	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 10A @ 400V Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65C ~ 125C Base Part Number: MR854	3791 Order	1+: $0.252 10+: $0.1903 100+: $0.1186 500+: $0.0812 1000+: $0.0624
1N5820GOS-ND	1N5820G	ON Semiconductor	View more Packaging: Bulk Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 2mA @ 20V Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65C ~ 125C Base Part Number: 1N5820	1890 Order	--
FDFMA2P859TTR-N D	FDFMA2P859T	ON Semiconductor	View more Series: PowerTrench Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: MicroFET 2x2 Thin Package / Case: 6-UDFN Exposed Pad	1000 Order	1+: $0
SMMSZ4688T1GOST R-ND	SMMSZ4688T1G	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 4.7V Power - Max: 500mW Current - Reverse Leakage @ Vr: 10A @ 3V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55C ~ 150C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	1000 Order	3000+: $0.0234 6000+: $0.0204 15000+: $0.0173 30000+: $0.0163 75000+: $0.0153 150000+: $0.0136
NTD4960N-1GOS-N D	NTD4960N-1G	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8.9A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Power Dissipation (Max): 1.07W (Ta), 35.71W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
2SK4066-DL-E-ND	2SK4066-DL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 12500pF @ 20V Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
2SK4124-1E-ND	2SK4124-1E	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 46.6nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P-3L Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
3LP01M-TL-E-ND	3LP01M-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	1000 Order	--
5LP01M-TL-E-ND	5LP01M-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 70mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCP Package / Case: SC-70, SOT-323	1000 Order	1+: $0
SFT1350-TL-HOST R-ND	SFT1350-TL-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 59 mOhm @ 9.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 20V Power Dissipation (Max): 1W (Ta), 23W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
1N458AFS-ND	1N458A	ON Semiconductor	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 25A @ 125V Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175C (Max) Base Part Number: 1N458	5477 Order	1+: $0.126 10+: $0.114 100+: $0.0619 500+: $0.0381 1000+: $0.026
NRVTS360ETFSWFT AGOSTR-ND	NRVTS360ETFSWFT AG	ON Semiconductor	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 12A @ 60V Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -65C ~ 175C	1000 Order	1500+: $0.0998 3000+: $0.0915 7500+: $0.0859 10500+: $0.0804 37500+: $0.0739
BAV70LT3GOSTR-N D	BAV70LT3G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 2.5A @ 70V Operating Temperature - Junction: -55C ~ 150C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Base Part Number: BAV70L	1000 Order	--

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