Allicdata Part #: | FDW2508PBTR-ND |
Manufacturer Part#: |
FDW2508PB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 12V 6A 8-TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 6A 1W Surface ... |
DataSheet: | FDW2508PB Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 6A |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 3775pF @ 6V |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The FDW2508PB is a P-channel MOSFET array in a very small footprint-less than 3mm squared. It combines eight (8) internally identicale and independent P-channel Mosfets with monolithic IC technology to provide a low on-state resistance with very low gate charge. This device is designed to help reduce power losses in the circuit and to provide a wide-range of applications. The FDW2508PB is suitable for use in applications such as lighting, motor drive, and load-switching.
The FDW2508PB is a high voltage and high current MOSFET array. It has a drain-source voltage of 40V and a drain current of 2A which makes it ideal for high power applications. Additionally, it has an RDS (on) of 5 ohms which is significantly lower than other MOSFET arrays. This low RDS (on) implies less power losses in long wire runs and, thus, allows designers to make the most efficient use of their available space.
The FDW2508PB has a typical threshold voltage of around -4V, thereby ensuring low on-state resistance with very low gate charge. The reduced gate charge ensures that high switching speeds can be achieved even with relatively low drive voltages. It also helps protect the device from over-voltage and over-current conditions, allowing it to operate reliably. This makes the FDW2508PB suitable for a wide range of applications.
In addition to its features which make it suitable for high power applications, the FDW2508PB also offers robust package and optimal performance. It comes in a TO-220AB package which offers excellent thermal conductivity properties and easy installation. Furthermore, the device offers high reliability with a maximum junction temperature of +150C and is compatible with the lead-free soldering process. This allows designers to rest assure that the device meets the most stringent requirements.
To sum it up, the FDW2508PB is a high voltage, high current and low RDS (on) MOSFET array suitable for a wide range of applications. The device offers low on-state resistance with very low gate charge, high reliability and excellent thermal behavior. Moreover, its optimized package offers easy installation and the device is compatible with lead-free solder processes. This makes the FDW2508PB an excellent choice for designers looking for a high performance MOSFET array.
The specific data is subject to PDF, and the above content is for reference
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