ATP104-TL-H Discrete Semiconductor Products

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The ATP104-TL-H is a high-performance monolithic n-channel enhancement type MOSFET that is designed for general-purpose digital and analogue applications. It is primarily used in medium and low voltage switching circuits, voltage regulating circuits, and other power applications.

The ATP104-TL-H is designed to have low capacitance and a linear characteristic which makes it ideal for switching applications in which digital signals are present. This device also has a low on-resistance, which makes it very suitable for power applications.

The ATP104-TL-H has a few unique features that make it ideally suited for some applications. It has a low parasitic capacitance and a fast switching time, which makes it an ideal choice for high-speed digital circuits. The internal construction of the device ensures that its low channel resistance is maintained to the maximum voltage rating.

The ATP104-TL-H has a simple internal construction which consists of two MOSFETs connected in series. The two MOSFETs each have a substrate diode which helps to reduce the on-resistance of the device. The diode is also used to provide a protection against negative transients.

The ATP104-TL-H is designed to operate in very low voltage range between 0.7V and 3.3V. The device also has a high-speed switching time of about 10ns, which makes it suitable for high-speed digital circuits. The maximum current rating is about 5A, which makes it suitable for power applications.

The ATP104-TL-H is also designed to operate in temperatures ranging from -55 to +125 degrees Celsius, which makes it suitable for use in a wide range of temperatures. The device also has a high frequency response, which makes it suitable for use in high-frequency circuits.

The ATP104-TL-H is designed to operate with a voltage rating of ±20V, which makes it suitable for use in analogue circuits. The device has a maximum output current of ten milliamps, which makes it suitable for use in low current applications. It also has a low input capacitance, which makes it suitable for high-frequency circuits.

The working principle of the ATP104-TL-H is quite simple. When a voltage is applied to the gate, the substrate diode conducts the current flow from the substrate to the source, and the MOSFETs control the current flow to the drain. This allows for the regulation of the drain current, which in turn makes it suitable for use in analogue and digital switching applications.

In conclusion, the ATP104-TL-H is a high-performance MOSFET suitable for use in general-purpose digital and analogue circuits. It has a low capacitance, a linear characteristic, a low on-resistance, a high switching speed, a wide temperature range, a high frequency response, and a low input capacitance. These features make it an ideal choice for switching applications in which digital signals are present.

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