DMC564030R Discrete Semiconductor Products |
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Allicdata Part #: | DMC564030RTR-ND |
Manufacturer Part#: |
DMC564030R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL NPN SMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | DMC564030R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | SMini6-F3-B |
Base Part Number: | DMC56403 |
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The emerging DMC564030R transistor array is the latest technological development in the field of pre-biased transistors and bipolar junction transistors (BJTs). Essentially, this type of transistor array is designed to provide essential power control functions, combining two highly efficient, complementary NPN and PNP transistors into a single package. This arrangement of transistors makes the circuit more convenient to use and able to offer significantly higher performance. Additionally, DMC564030R is also capable of excellent power control accuracy and is highly preferred for applications where both a high level of accuracy and long-term reliability are desired.
The DMC564030R is available in both surface mount and through-hole versions. The most typical application for the DMC564030R is in linear supplies, such as those used for harmonic distortion or battery-charging - though the DMC564030R can support a wide range of other applications such as power control, load switching and level shifting.
Due to its dual transistor design, the DMC564030R has the advantage of being able to quickly switch between low-voltage and high-voltage applications. This feature allows power systems to achieve higher efficiency, while at the same time minimizing switching losses. Moreover, the DMC564030R also offers excellent thermal performance and can easily handle high power loads without further components.
The dual transistor array of the DMC564030R is designed using the common-emitter structure. The base of the PNP transistor, connected to the collector of the NPN transistor, serves as the base for the NPN transistor. This design allows the NPN transistor to operate as a switch for the PNP transistor, allowing for greater current flow when the PNP is on, and decreased current when it is off. The DMC564030R can be further integrated with various assemblies and support devices for additional control and flexibility.
Using this unique design, the DMC564030R is capable of delivering superior power control precision with no compromise on performance, size or cost. This ensures that other components, such as relays, are unnecessary, and the device can work in areas where space and component count are huge considerations. The design also allows multiple NPN and PNP transistors to be connected on a single chip. This results in reduced size and weight, in comparison with discrete component assemblies, therefore reducing the costs without sacrificing performance or flexibility.
Overall, the DMC564030R transistor array represents a significant leap forward in the field of transistors and bipolar junction transistors. It offers a number of advantages, from its high-performance power control accuracy to its size and cost. Most importantly, the dual transistor array provides an efficient and reliable mechanism for switching between high and low voltage applications with minimal switching losses.
The specific data is subject to PDF, and the above content is for reference
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