FQD7N30TM Discrete Semiconductor Products |
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Allicdata Part #: | FQD7N30TMTR-ND |
Manufacturer Part#: |
FQD7N30TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 300V 5.5A DPAK |
More Detail: | N-Channel 300V 5.5A (Tc) 2.5W (Ta), 50W (Tc) Surfa... |
DataSheet: | FQD7N30TM Datasheet/PDF |
Quantity: | 1000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 2.75A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 610pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FQD7N30TM is a very useful field-effect transistor, or FET, or a type of MOSFET, designed to suit specific applications. This article will provide an overview of the FQD7N30TM’s application field as well as its working principle.
The FQD7N30TM is an N-Channel enhancement mode MOSFET that has an effective die area of over 6 times that of the previous FQD7N10TM. It is a highly reliable device that offers great performance with very low on-resistance values. These properties make it a great choice for using in power switching and control applications. It is highly suitable for very low voltage applications as it has a low leakage current rating as well.
The FQD7N30TM is specifically designed for applications where it operates at very low gate voltages. It features a 500-Volts per milli-amp breakdown voltage and a gate-source current of 4-microamps. Its wide range of rated temperatures make it useful in many applications. It is also capable of handling high switching currents, allowing it to be used in high power applications. Its high power capabilities are further enhanced by its high on-resistance and low gate capacitance.
The working principle of the FQD7N30TM is based on the transistor’s gate being used as a control element. The gate is driven with a voltage, usually +3 volts or higher, to open or close a conducting channel. This channel, between the source and the drain, controls the current flow between them. Depending on the voltage of the gate, the current flow can be restricted, allowing for precise control. When the voltage of the gate is set at 0 volts, the channel is closed, and current flow is stopped.
The FQD7N30TM has several applications in various fields, including automotive, power supply, motor control, and robotics. In automotive applications, the FQD7N30TM can be used as a high side switch to control lights, heating and air conditioning systems, and the engine control unit. Because of its low gate current capability, it can provide precise control in these types of power switching applications.
In power supply applications, the FQD7N30TM can be used as a load switch to regulate current and provide protection. Its high on-resistance and low gate capacitance make it a great choice for switching applications. It also has a very low gate voltage, allowing for precise control over current flow. In addition, its wide operating temperature range allows it to be used in a variety of power supply applications.
The FQD7N30TM can also be used in motor control applications, where it can provide superior control and precision. Its wide range of voltages and temperatures make it a suitable choice for motor control and for switching high currents. Its high on-resistance and low gate capacitance also enable it to be used in motor control applications.
The FQD7N30TM can be used in robotics applications as well. Its low gate voltage and wide temperature range make it useful in a variety of robotics applications. Its high on-resistance and low gate capacitance allow it to provide precise control over motors and other robotic components. It can also be used in high power applications, such as in robotic arm strength control.
In summary, the FQD7N30TM is a high quality single field-effect transistor, or MOSFET, designed for low voltage and power switching applications. Its unique design allows for precise control and protection, enabling it to be used in a wide range of applications. Its wide temperature range and low gate current capability allow for high power switching applications and motor control. Together, these properties make the FQD7N30TM a very attractive option for many applications.
The specific data is subject to PDF, and the above content is for reference
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