FQD7N30TM Allicdata Electronics

FQD7N30TM Discrete Semiconductor Products

Allicdata Part #:

FQD7N30TMTR-ND

Manufacturer Part#:

FQD7N30TM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 300V 5.5A DPAK
More Detail: N-Channel 300V 5.5A (Tc) 2.5W (Ta), 50W (Tc) Surfa...
DataSheet: FQD7N30TM datasheetFQD7N30TM Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: QFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 700 mOhm @ 2.75A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
FET Feature: --
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQD7N30TM is a very useful field-effect transistor, or FET, or a type of MOSFET, designed to suit specific applications. This article will provide an overview of the FQD7N30TM’s application field as well as its working principle.

The FQD7N30TM is an N-Channel enhancement mode MOSFET that has an effective die area of over 6 times that of the previous FQD7N10TM. It is a highly reliable device that offers great performance with very low on-resistance values. These properties make it a great choice for using in power switching and control applications. It is highly suitable for very low voltage applications as it has a low leakage current rating as well.

The FQD7N30TM is specifically designed for applications where it operates at very low gate voltages. It features a 500-Volts per milli-amp breakdown voltage and a gate-source current of 4-microamps. Its wide range of rated temperatures make it useful in many applications. It is also capable of handling high switching currents, allowing it to be used in high power applications. Its high power capabilities are further enhanced by its high on-resistance and low gate capacitance.

The working principle of the FQD7N30TM is based on the transistor’s gate being used as a control element. The gate is driven with a voltage, usually +3 volts or higher, to open or close a conducting channel. This channel, between the source and the drain, controls the current flow between them. Depending on the voltage of the gate, the current flow can be restricted, allowing for precise control. When the voltage of the gate is set at 0 volts, the channel is closed, and current flow is stopped.

The FQD7N30TM has several applications in various fields, including automotive, power supply, motor control, and robotics. In automotive applications, the FQD7N30TM can be used as a high side switch to control lights, heating and air conditioning systems, and the engine control unit. Because of its low gate current capability, it can provide precise control in these types of power switching applications.

In power supply applications, the FQD7N30TM can be used as a load switch to regulate current and provide protection. Its high on-resistance and low gate capacitance make it a great choice for switching applications. It also has a very low gate voltage, allowing for precise control over current flow. In addition, its wide operating temperature range allows it to be used in a variety of power supply applications.

The FQD7N30TM can also be used in motor control applications, where it can provide superior control and precision. Its wide range of voltages and temperatures make it a suitable choice for motor control and for switching high currents. Its high on-resistance and low gate capacitance also enable it to be used in motor control applications.

The FQD7N30TM can be used in robotics applications as well. Its low gate voltage and wide temperature range make it useful in a variety of robotics applications. Its high on-resistance and low gate capacitance allow it to provide precise control over motors and other robotic components. It can also be used in high power applications, such as in robotic arm strength control.

In summary, the FQD7N30TM is a high quality single field-effect transistor, or MOSFET, designed for low voltage and power switching applications. Its unique design allows for precise control and protection, enabling it to be used in a wide range of applications. Its wide temperature range and low gate current capability allow for high power switching applications and motor control. Together, these properties make the FQD7N30TM a very attractive option for many applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FQD7" Included word is 17
Part Number Manufacturer Price Quantity Description
FQD7N10TM ON Semicondu... -- 1000 MOSFET N-CH 100V 5.8A DPA...
FQD7P06TM_NB82050 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 60V 5.4A DPAK...
FQD7N20TM_F080 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 5.3A DPA...
FQD7P06TM_F080 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 60V 5.4A DPAK...
FQD7P20TM_F080 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 200V 5.7A DPA...
FQD7N10LTF ON Semicondu... -- 1000 MOSFET N-CH 100V 5.8A DPA...
FQD7N20LTF ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 5.5A DPA...
FQD7N20TF ON Semicondu... -- 1000 MOSFET N-CH 200V 5.3A DPA...
FQD7N20TM ON Semicondu... -- 1000 MOSFET N-CH 200V 5.3A DPA...
FQD7P06TF ON Semicondu... -- 1000 MOSFET P-CH 60V 5.4A DPAK...
FQD7N30TF ON Semicondu... 0.0 $ 1000 MOSFET N-CH 300V 5.5A DPA...
FQD7P20TF ON Semicondu... -- 1000 MOSFET P-CH 200V 5.7A DPA...
FQD7P06TM ON Semicondu... -- 7500 MOSFET P-CH 60V 5.4A DPAK...
FQD7N30TM ON Semicondu... -- 1000 MOSFET N-CH 300V 5.5A DPA...
FQD7N20LTM ON Semicondu... -- 1000 MOSFET N-CH 200V 5.5A DPA...
FQD7P20TM ON Semicondu... -- 10000 MOSFET P-CH 200V 5.7A DPA...
FQD7N10LTM ON Semicondu... -- 5000 MOSFET N-CH 100V 5.8A DPA...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics