FQD7N20TF

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The FQD7N20TF is a field-effect power transistor, used to switch high-current loads with low resistance. It\'s part of the N-channel enhancement mode Mosfet family, also known as a Metal-Oxide-Semiconductor Field-Effect Transistor or MOSFET. In its simplest form, It consists of four pins. The gate, drain, source, and substrate. The drain and source are used to connect the resistive load across the MOSFET. Applying a small current to the gate will change the resistance between the drain and source, inhibiting the flow of current through the drain and source.

FQD7N20TF is designed for applications where size and low on-resistance are important. It is based on a FloMOS Technology and is ideal for use in power control, load switch, and DC-DC converter applications. It has a low gate charge on-state resistance, low gate capacitance, fast switching speed and low gate-source threshold voltage.

The FQD7N20TF has a drain-source on-resistance of 1.2 ohms, allowing it to handle currents of up to 80amps at 25V. It has a high drain-source voltage rating of 100V, making it suitable for use in automotive applications. The transconductance of the FQD7N20TF is high, making it suitable for use in high-efficiency switching regulators.

In operation, the device acts like a bidirectional switch, as when voltage is applied to the gate of the device, a conductive area or channel is formed between the drain and source terminals, allowing the flow of current from the drain to the source. When the voltage on the gate terminal is removed, the channel is no longer formed and the circuit is blocked, inhibiting the flow of current. This basic operation is used in a wide range of applications, such as switch mode power supplies, DC-DC converters, motor controllers, and AC motor drives.

The device also features over-current and over-temperature protection, helping to ensure reliable operation and long life. The FQD7N20TF can also be used in gateswitching networks, allowing high-speed switching between two or more sources of power. It is also suitable for use in other switching applications such as relays. In addition, the device can be used for high-efficiency, low-voltage operation.

In conclusion, the FQD7N20TF is a simple and efficient 4-pin, N-channel Enhancement Mode Mosfet, suitable for a wide variety of power control and switching applications. Its low on-resistance and high drain-source voltage rating make it suitable for use in a variety of automotive applications, while its over-current and over-temperature protection ensures reliable operation and long life. It is also suitable for gate-switching networks, allowing high-speed switching between different power sources, while its high transconductance also makes it suitable for use in high-efficiency applications.

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