Allicdata Part #: | FQD7N20TM-ND |
Manufacturer Part#: |
FQD7N20TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 5.3A DPAK |
More Detail: | N-Channel 200V 5.3A (Tc) 2.5W (Ta), 45W (Tc) Surfa... |
DataSheet: | FQD7N20TM Datasheet/PDF |
Quantity: | 1000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 690 mOhm @ 2.65A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 45W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The FQD7N20TM is a type of N-channel MOSFET, or metal-oxide-semiconductor field-effect transistor, with a drain-to-source voltage capability of up to 20 volts and a maximum drain current of 7 amperes. It is designed to be used in power management applications, such as motor and light control, over-current protection, and switching in a wide range of applications. Furthermore, the device is characterized by low conductor resistance, high power efficiency, fast switching time, and low noise levels.
The basic principle behind the operation of a MOSFET is that by controlling the voltage applied across its terminals, the current passing through its drain and source terminals can be controlled.The FQD7N20TM is a dual-gate MOSFET, meaning that it has two gates: the main gate and the secondary gate. The main gate is connected to the source terminal, while the secondary gate is connected to the drain terminal. When a voltage is applied across the main gate, a charge builds up between the two gates, allowing current to pass through. When the voltage is decreased, the electric field between the two gates is weakened, stopping current from passing through. The FQD7N20TM can work in either enhancement mode, or depletion mode, depending on the applied voltages.
In enhancement mode, the applied voltage must be higher than the threshold voltage for the device. Once the voltage exceeds the threshold voltage, the charge builds up between the two gates, allowing current to flow through the device. The amount of current passing through the device is controlled by the voltage applied across the main gate, as well as by the value of the drain-to-source resistance. In depletion mode, the applied voltage must be lower than the threshold voltage. This results in the MOSFET being “turned off”, preventing the passage of current through the device.
The FQD7N20TM is specifically designed for use in power management applications, such as motor and light control, over-current protection, and switching. It is characterized by having low on-state resistance, which allows for high power efficiency. Additionally, it features fast switching times and low noise levels, which are important when using it for motor or light control. Furthermore, it has a maximum drain current of 7 amperes, making it suitable for a wide range of applications. In short, the FQD7N20TM is an excellent choice for any power management application, due to its low on-state resistance, fast switching times, low noise levels, and high current capability.
The specific data is subject to PDF, and the above content is for reference
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