Allicdata Part #: | KSA1013RBU-ND |
Manufacturer Part#: |
KSA1013RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 160V 1A TO-92L |
More Detail: | Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW T... |
DataSheet: | KSA1013RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 200mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSA1013 |
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Bipolar junction transistors (BJTs) are often used in amplifying or switching electrical signals due to their unique characteristics. Among the common types of BJTs is the KSA1013RBU, which has impressive features that make it suitable for certain applications. In this article, the application field and the working principle of the KSA1013RBU are discussed in detail.
The KSA1013RBU is a single bipolar junction transistor (BJT). It is mainly used as an amplifier or switch in digital circuits, as it has an impressive feature set that makes it suitable for these applications. It has an operating frequency up to 500kHz, a low collector-emitter saturation voltage of 0.25V, and a hFE rating of up to 600. It also has an emitter voltage rating of 7.0V, a collector current rating of 0.5A, and a collector power rating of 6.0W.
The KSA1013RBU has a PNP structure, which means that it is a type of amplifier circuit where the voltage applied to the base of the transistor is larger than that at its emitter. This allows current to flow from the collector to the emitter, allowing it to amplify the signal. In addition, the PNP structure also allows it to be used as a switch, where the transistor can be switched on and off by changing the voltage to the base of the transistor.
The KSA1013RBU also features excellent stability, with the base-emitter voltage typically falling within the range of 0.3V-0.6V. This helps to make it suitable for analog applications, as it helps to ensure that the voltage at the base of the transistor is constant. This can be especially important in analog applications, as it helps to ensure that the signal is accurately amplified. In addition, the KSA1013RBU also has a low noise level, making it suitable for noise-sensitive applications.
The working principle of the KSA1013RBU is relatively simple. When a positive voltage is applied to the base of the transistor, current can flow from the collector to the emitter, allowing the transistor to amplify the signal. This is because the voltage applied to the base of the transistor is larger than that at its emitter, allowing a current to flow from the collector to the emitter. On the other hand, when a negative voltage is applied to the base of the transistor, the current is blocked and the transistor acts as an ideal switch, turning off the signal.
In conclusion, the KSA1013RBU is an excellent single bipolar junction transistor, with impressive features that make it highly suitable for certain applications, such as amplifying and switching digital signals. It has excellent stability, low noise levels, and a wide operating frequency, making it suitable for analog and noise sensitive applications. Furthermore, its working principle is relatively simple, with a positive or negative voltage applied to the base of the transistor determining whether the signal is amplified or blocked.
The specific data is subject to PDF, and the above content is for reference
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