KSA1201OTF Allicdata Electronics
Allicdata Part #:

KSA1201OTF-ND

Manufacturer Part#:

KSA1201OTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 120V 0.8A SOT-89
More Detail: Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 1W ...
DataSheet: KSA1201OTF datasheetKSA1201OTF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The KSA1201OTF is a single bipolar transistor device offering many advantages compared to most other standard transistor types. It is used in numerous applications and is available in a variety of packages. In the following sections, we will discuss the applications and working principle of the KSA1201OTF.

Application Field

The KSA1201OTF is primarily intended for use in medium-current switching and amplifier circuits. Due to its wide variety of package styles, the KSA1201OTF can also be used in applications such as radio frequency (RF) power supplies and memories. Additionally, it can be used in power supplies, voltage regulators, amplifiers, and driver applications.

Working Principle

A bipolar transistor is a type of transistor that uses a combination of p-type and n-type semiconductor materials to create a three-terminal amplifier circuit. This type of transistor is commonly used for switching, controlling current, and amplifying signals. The KSA1201OTF operates in the same manner as other bipolar transistors and has four main sections that work together to control and amplify the current flowing through the device.

The active region of the transistor is the part of the device responsible for the current flow. The base side of the device is used to control the flow and the collector side is the output where the current leaves the device. The emitter side is the base side of the device which allows current to flow into the active region.The base-emitter junction is the portion of the transistor where current flows between the two sections. This junction is responsible for the current gain and allows the current to remain regulated. The base layer of the device is responsible for the control and direction of the current. The voltage applied to the base layer will determine the amount of current flowing through the device.

The collector layer of the device is responsible for the output current. The current flows from the base layer to the collector layer, and the voltage applied to the collector layer determines how much current will be allowed to flow. Once the current leaves the collector layer, it is amplified and regulated by the emitter layer.

Finally, the collector-emitter junction is the portion of the device where the amplified and regulated current is output. The collector-emitter junction is responsible for ensuring that the output current is consistent and stable. This ensures that the device functions correctly and operates to its fullest potential.

The KSA1201OTF is a versatile and reliable transistor device. Its wide selection of packages and its ability to control and amplify current make it ideal for many applications. Its working principle is relatively simple and makes it an effective and efficient solution for many different applications and projects.

The specific data is subject to PDF, and the above content is for reference

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