KSA1381ESTSTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 2mA, 20mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 10V
Power - Max:	7W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3
Base Part Number:	KSA1381

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KSA1381ESTSTU Application Field and Working Principle

Background

KSA1381ESTSTU is a type of bipolar junction transistor (BJT) belonging to the single category. It is a type of three-terminal electronic semiconductor device, with a base and two collectors, usually composed of thin silicon wafer doped with impurities to create PN junctions. It is designed to operate with AC and DC voltages, making it a versatile tool for a wide range of applications.

Application Field

KSA1381ESTSTU is commonly used in a variety of applications, such as amplifying and switching circuits, and as an active component in the design of integrated circuits. Due to its low collector–emitter voltage, relatively high transconductance, and sensitivity to temperature changes, it is often used for switching, amplification and signal modulation in electronic systems. Moreover, it is also suitable for use in circuit applications such as voltage regulators, DC-DC converters, resonant circuit controllers and other equipment.

Working Principle

The working of a KSA1381ESTSTU transistor is based on the principle that when a voltage is applied to the base terminal, it will allow the current to flow from the collector to the emitter, which controls the movement of electrons between the two ends. Depending on the directions of the voltage and current, the transistor can work in two different modes. In the ‘reverse active mode’, the current flowing from the collector to the emitter is ‘switched off’, meaning that the voltage will be decreased across the transistor. In the ‘forward active mode’, the current flowing from the collector to the emitter is ‘switched on’, allowing the voltage to increase across the transistor. The ratio of collector current to the base current can be regulated by varying the base current, thus providing a controllable output current.

Reliability and Safety

The KSA1381ESTSTU transistor is designed with a high element accuracy and low threshold voltage, making it reliable and safe for operation. It also supports a wide range of operating temperature and voltage, providing excellent long-term stability and reliability. As an additional safety feature, the KSA1381ESTSTU transistor is designed with a protective circuit, which prevents it from short-circuiting and over-current conditions.

Conclusion

The KSA1381ESTSTU transistor is a type of BJT belonging to the single category. It is a versatile tool suitable for a wide range of applications due to its small size, high transconductance, and low collector–emitter voltage, as well as its low threshold voltage and wide range of operating temperature and voltage. Furthermore, it is also reliable and safe, thanks to its protective circuit.

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