Allicdata Part #: | KSA1182YMTFTR-ND |
Manufacturer Part#: |
KSA1182YMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.5A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 500mA 200MHz 150m... |
DataSheet: | KSA1182YMTF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 1V |
Power - Max: | 150mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | KSA1182 |
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The KSA1182YMTF is a bipolar junction transistor (BJT) for single-transistor applications. This device is designed to provide high frequency operation with a wide range of current gain and bandgap voltage. It also has a wide range of power dissipation and power rating.
The KSA1182YMTF is ideal for applications requiring high current gain and voltage conditions. This includes amplifications, electronic acts, etc. It is suitable for both high frequency radio frequency (RF) applications and non-RF applications.
The device consists of three sections: a base, an emitter and a collector. The base and emitter are connected to each other and to the suitable power supply. The collector is connected to the output load. The base current is then made to flow into the collector by the charge of the base voltage. The collector current is thus proportional to the base current and is usually orders of magnitudes higher than the base current. The collector current thus provides a powerful amplifying effect.
The KSA1182YMTF also has a wide bandgap voltage. This means that the voltage across the base-emitter junction has very low voltage drop. It is thus suitable for applications requiring high voltage gain. The device also has a wide power range, with the power rating of 40W. This allows the device to be used in applications requiring a lot of power.
In addition, the KSA1182YMTF also has a wide temperature range. It is thus suitable for applications requiring precise temperature control. This is especially important for applications such as digital electronics, where temperature needs to be closely monitored.
The KSA1182YMTF is used in a variety of applications. It is used in amplifiers, level converters, voltage regulators, clock drivers, and oscillators. It is also used for audio power amplifiers, switching power supplies, and low-noise home theater systems. In addition, it is also used in high-frequency radio frequency (RF) applications. The device is also suitable for applications requiring very high frequency operation, such as microwave radio and radar systems.
The KSA1182YMTF is an excellent choice for applications requiring high current gain and bandgap voltage, wide temperature ranges, and high power ratings. This device is ideal for a variety of applications and is suitable for both high-frequency and non-RF applications. It also has a wide range of power dissipation and power rating, making it ideal for many different applications.
The specific data is subject to PDF, and the above content is for reference
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