Allicdata Part #: | KSA1013RTA-ND |
Manufacturer Part#: |
KSA1013RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 160V 1A TO-92L |
More Detail: | Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW T... |
DataSheet: | KSA1013RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 200mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSA1013 |
Description
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Introduction to KSA1013RTA
KSA1013RTA is a single discrete bipolar junction transistor (BJT), which is a three-terminal, voltage-controlled semiconductor device used to amplify or electronically switch a range of signals in a variety of applications. It is typically designed as an NPN (Negative-positive-negative) device, consisting of two p-type semiconductors separated by an n-type semiconductor which acts as a bridge between them. Further, the KSA1013RTA also offers excellent gain linearity and high switching thresholds gains - making it ideal for a range of applications, including current-amplifying, power switching and logic, among others.What are Bipolar Junction Transistors?
Bipolar junction transistors (BJTs) are three-terminal, voltage-controlled devices with the capability to amplify signals based on their base voltage. BJTs may come in two varieties, PNP (positive-negative-positive) or NPN (negative-positive-negative). In a PNP type BJT, current flow is in the opposite direction of an NPN, as the base is biased with either a positive voltage or a voltage below ground. When a BJT is created, two complimentary transistors are formed in one component to form the “BJT pair”.Structure and Working Principle of KSA1013RTA
KSA1013RTA features two complementary BJT transistors, an NPN transistor and a PNP transistor, formed in one component. It operates on a voltage-controlled principle, wherein a voltage applied to the emitter terminal causes electrons to flow through the transistor\'s "base". This current is controlled by the voltage on the base, which is applied using an external voltage source.The collector-emitter voltage of the transistor is fixed, which is known as the collector-emitter breakdown voltage or the saturation voltage. This can be adjusted by adjusting the voltage on the base and will determine the current gain of the transistor. When operating correctly, the KSA1013RTA\'s collector current is mainly dependent on the base current.KSA1013RTA Applications
KSA1013RTA has various applications, ranging from amplifying signals to switching power, logic and computer chips. It is primarily used for current amplifying and switching applications due to its high switching threshold gains, excellent driver capability and linear gain characteristics. At the front-end of amplifiers, KSA1013RTA is used as a preamplifier or as a differential amplifier transistor in order to amplify small signal levels that are too small to drive a power amplifier. In switching applications, the device can be used in a wide range of automation equipment, such as robotic systems, factory automation and programmable logic controllers (PLCs). Other applications include vehicle control systems and auxiliary circuits, such as ignition systems, fuel injectors and so on. KSA1013RTA is also used in portable audio devices and wireless communication systems, such as mobile phones and Wi-Fi-enabled devices.Conclusion
KSA1013RTA is a single discrete bipolar junction transistor (BJT). It consists of two complementary transistors, an NPN transistor and a PNP transistor, formed in one component. It operates on a voltage-controlled principle wherein a voltage applied to the emitter terminal causes electrons to flow through the base. The device has high switching threshold gains and excellent gain linearity characteristics, making it ideal for current-amplifying, power switching and logic applications. The device is used in various applications, such as amplifying signals, switching power, logic and computer chips, factory automation, vehicle control systems and audio devices, among others.The specific data is subject to PDF, and the above content is for reference
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