Allicdata Part #: | KSA1142YSTU-ND |
Manufacturer Part#: |
KSA1142YSTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 180V 0.1A TO-126 |
More Detail: | Bipolar (BJT) Transistor PNP 180V 100mA 180MHz 1.2... |
DataSheet: | KSA1142YSTU Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 180V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 10mA, 5V |
Power - Max: | 1.2W |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126-3 |
Description
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KSA1142YSTU is a single transistor designed for automotive applications. It utilizes a PNP general-purpose transistor, and has excellent heat dissipation and low noise characteristics. The transistor consists of 40V NPN collector-emitter voltage rating and 200mA collector current rating. KSA1142YSTU also features a built-in protection diode, providing additional protection against overvoltage and shorting of the collector-emitter junction.
Application Field and Working Principle
KSA1142YSTU is mainly used for general-purpose switching and amplifier applications in automotive electronic systems. It is used for driving motors, relays, power lamps, LEDs and other load devices.KSA1142YSTU is a two-junction transistor consisting of a proper base, collector, and emitter. The base-emitter junction is forward biased (forward biased is when there is a greater voltage applied on the anode than on the cathode) and the collector-base junction is reverse biased. When a voltage is applied across the base and emitter, current is generated through the base-emitter junction and this creates minority carriers in the collector region due to the phenomenon of electron migration. When the base-emitter junction is forward biased and the collector circuit is completed, it allows current to flow through the collector-base junction. And the current flowing through the collector and emitter is amplified according to the current gain of the transistor.When a voltage is applied to the base, this causes current to flow through the base-emitter junction, creating a forward bias. The amount of current that flows through the base-emitter junction is determined by the voltage applied to the base and the current gain of the transistor. As a result, a certain amount of current is passed through the collector-base junction, and this current is amplified according to the gain of the transistor.
KSA1142YSTU is also used in switching and amplifier applications in automotive electronic systems. It can be used to drive relays, motors, lamps, LEDs and other load devices. Furthermore, its low power consumption, low noise characteristics and excellent thermal dissipation make it ideal for automotive applications.
In conclusion, KSA1142YSTU is a single transistor designed for automotive applications. It is mainly used in general-purpose switching and amplifier applications, and its excellent heat dissipation and low-noise characteristics make it ideal for these applications. It has a 40V NPN collector-emitter voltage rating and 200mA collector current rating and a built-in protection diode to provide additional protection against overvoltage and shorting of the collector-emitter junction.
The specific data is subject to PDF, and the above content is for reference
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