NTK3139PT5G Discrete Semiconductor Products

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NTK3139PT5G is an N-channel enhancement mode power transistor, specifically designed for high performance power switching circuits. It is specially designed for almost all switching applications from medium to high power switch mode applications. The device is manufactured using industry-leading high-voltage process techniques to ensure performance and reliability.

NTK3139PT5G is intended for use in inductive and capacitive circuits, such as those found in DC-DC converter applications. The device also has excellent thermal endurance, making it ideal for applications where high temperatures are expected. Additionally, it features low total gate charge, a low drain-source on-state resistance (RDS(on)), and a wide operating temperature range of -55 to 150C.

The NTK3139PT5G offers an integrated power package consisting of an N-channel MOSFET, a Schottky diode and a PNP transistor. This integrated power package enables it to minimize power losses, minimize switching losses, and reduce board space for power management applications. This device also has an exceptionally fast switching speed, with a typical turn-on and turn-off times of approximately 3.2 ns and 0.8 ns respectively.

The NTK3139PT5G is widely used in high-performance switching applications such as DC-DC converter, DC-AC inverters, LED lighting, battery chargers, and power supplies. In DC-DC converter applications, the device can be used to provide high voltage and current pulse trains and offer high frequency operation and high switching speeds. For LED lighting applications, the device can be used to provide a precise, reliable and efficient light source. For battery chargers, the device can be used to accurately regulate the charging process. In power supplies, the device can provide a reliable and efficient power solution.

The working principle of NTK3139PT5G is fairly simple and can be understood with a general understanding of transistors, FETs and MOSFETs. A FET is a type of semiconductor device that allows for current to flow through it in one direction when the gate voltage is applied, creating a channel. A MOSFET is similar to the FET but is differentiated by the fact that the gate voltage is created by two electrodes instead of one, making it more efficient and reliable. The NTK3139PT5G is an N-channel enhancement type MOSFET, in which the current carrying channel is formed between the source and drain. The voltage on the gate is not as important for N-channel enhancement type MOSFETs as it is for P-channel enhancement type MOSFETs. When a voltage is applied to the drain-source, the channel between the source and drain is created and the current starts flowing through it.

The NTK3139PT5G is a reliable, efficient and highly integrated power device, suitable for a wide range of switching applications. It offers a low RDS(on) and low total gate charge, coupled with an exceptionally fast switching speed, making it ideal for high performance switching applications in DC-DC converters, DC-AC inverters, LED lighting, battery chargers, and power supplies.

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