NTK3043NT1G Allicdata Electronics

NTK3043NT1G Discrete Semiconductor Products

Allicdata Part #:

NTK3043NT1GOSTR-ND

Manufacturer Part#:

NTK3043NT1G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 20V 210MA SOT-723
More Detail: N-Channel 20V 210mA (Ta) 310mW (Ta) Surface Mount ...
DataSheet: NTK3043NT1G datasheetNTK3043NT1G Datasheet/PDF
Quantity: 27
4000 +: $ 0.04316
Stock 27Can Ship Immediately
$ 0.05
Specifications
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Package / Case: SOT-723
Supplier Device Package: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 310mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
Vgs (Max): ±10V
Series: --
Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 10mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NTK3043NT1G, also known as N-channel enhancement mode field-effect transistor (MOSFET), is a semiconductor device designed and manufactured for a variety of applications. It is classified as a single-gate MOSFET, and it is one of the smallest MOSFETs available in the market. The device is commonly used in low-power, low-voltage electronic circuits such as audio amplifiers and low power switching applications. Due to its small size and low power consumption, it is also popular for use in mobile and handheld devices.

NTK3043NT1G is manufactured using a highly-doped semiconductor process. This process results in a low-threshold voltage which allows the transistor to switch quickly and with minimal current leakage. The device has an enhanced gate oxide insulation layer which provides lower on-state resistance and higher breakdown voltage. The device also features an extended temperature range and a low variability between parts, making it ideal for use in high-reliability and long-term applications.

The working principle behind NTK3043NT1G is similar to that of any other MOSFET. The device consists of four terminals: gate, source, drain, and substrate. When a voltage is applied to the gate terminal, it creates an electric field which modulates the conducting channel between the source and drain. This channel acts as a resistor whose resistance is controlled by the gate voltage. When the gate voltage exceeds the threshold voltage, a conducting channel is created, allowing current to flow between the source and drain.

NTK3043NT1G is most commonly used in applications such as audio amplifiers, small LED displays, switching regulators, gate drivers, inverters, and many more. In addition, it can also be used in low-power, low-voltage electronic circuits as it has a very low forward conduction drop. Finally, it is also used in electronic toys, automotive electronics, and medical devices due to its low power consumption, small size, and low cost.

In short, NTK3043NT1G is a highly versatile and reliable transistor which is used in a wide range of applications. It has a low threshold voltage, an extended temperature range, and a low variability between parts, making it an ideal choice for use in high-reliability and long-term applications. It is also popular in mobile and handheld devices due to its small size and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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