Allicdata Part #: | NTK3134NT1GOSTR-ND |
Manufacturer Part#: |
NTK3134NT1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 750MA SOT-723 |
More Detail: | N-Channel 20V 750mA (Ta) 310mW (Ta) Surface Mount ... |
DataSheet: | NTK3134NT1G Datasheet/PDF |
Quantity: | 48000 |
4000 +: | $ 0.06463 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Vgs (Max): | ±6V |
Input Capacitance (Ciss) (Max) @ Vds: | 120pF @ 16V |
FET Feature: | -- |
Power Dissipation (Max): | 310mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-723 |
Package / Case: | SOT-723 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 750mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 890mA, 4.5V |
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NTK3134NT1G is a high-performance single p-channel Enhancement Mode Field-Effect Transistor (MOSFET). It is a N-channel power MOSFET, which has a low on-state resistance. This MOSFET can be used in many application fields, including amplifier, controlling motor and logic circuits.
This power MOSFETs has three main terminal: gate, source and drain. The gate terminal is used to control the device, source is the input signal and drain is the output signal. When the drain-source voltage (Vds) is applied to the device, a channel is created between the source and drain with current flowing through it. The gate voltage (Vgs) is applied to the gate terminal, which then controls the current flowing through the channel. When the gate voltage is increased, the current flowing through the channel also increases.
The P-Channel MOSFET has a positive on-state resistance (Ron). This means that the current flowing through the device can be controlled by applying a negative voltage to the gate terminal. When the gate voltage is decreased, the current flowing through the device decreases. This is beneficial for low-voltage applications as the current can be controlled with a smaller voltage.
NTK3134NT1G is suitable for switching applications such as controlling motor, LEDs, relays and drivers and amplifier applications such as audio amplifiers, RF amplifiers and power amplifiers. It can be used in power supply and battery protection circuits, where it is used to control the current flowing to the battery. It is also widely used in logic circuits and power converters.
The power MOSFET also has a high breakdown voltage (BVds) of up to 130V, which makes it suitable for high-voltage applications. It also has a low threshold voltage (Vgs) of typically 1.0V, which increases its performance in lower voltage applications.
Besides the high performance, NTK3134NT1G also featured with low on-state resistance (Ron), high yield and high reliability. The high yield means that it is capable of delivering higher performance over a long period of time. The high reliability makes it suitable for use in long-term applications such as automotive, industrial and consumer electronic applications.
In summary, NTK3134NT1G is a suitable choice for a wide range of applications ranging from low-voltage switching to high-voltage power conversion. It features with low on-state resistance and high breakdown voltage, making it an ideal choice for many different applications. Its reliability and high yield make it suitable for a long service life.
The specific data is subject to PDF, and the above content is for reference
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