FQD7N10LTF

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FQD7N10LTF is one of many power field-effect transistors (FETs) used in various applications that require both fast and efficient switching. The FQD7N10LTF is a 10 Amp, 100 Volt N-channel enhancement-mode MOSFET (metal oxide semiconductor field-effect transistor), manufactured by Fairchild Semiconductor. It is suitable for low to medium power designs and applications, due to its low “RDS(ON)” resistance.Rating & FeatureThe FQD7N10LTF has a maximum rating of 10 Amp continuous drain current and 100 Volt Drain-Source voltage and 0.27Ω RDS(ON) maximum resistance. It is equipped with gate-source Voltage (VGS) and Infineon Avalanche Rated technologies that protect and enhance the performances of this power MOSFET. First, VGS enables the reduction of gate charge (Qg) compared to the RDS(ON) of the device. This, in turn, reduces switching losses in high-speed switching applications, thus providing better thermal performance. Also, the use of VGS ensures good sustained switching performance over a wide temperature range.Second, the FQD7N10LTF is equipped with Infineon Avalanche rated technology which can withstand transient voltages due to load short circuit or over voltage faults and guarantee operational lifetime for the device. This feature provides improved thermal performance, extended operational life and greater reliability in high-speed switching applications.Working PrincipleThe basic operation of an N-channel MOSFET is similar to that of a P-channel device. Source and drain are connected to a semiconductor medium, while the gate is connected to an insulated material. A small electric field is established by the applied voltage on the gate. When the voltage on the gate is reversed, a field is created that pushes away electrons, thus creating a thin but powerful insulating film between the semiconductor medium and the gate.This thin layer prevents electric current from flowing through the device, making it the most effective way to turn the transistor off. In the “on” state, however, the gate voltage allows current to pass through the device. This current then causes a voltage drop on the drain-source voltage, which is proportional to the channel resistance, or “RDS(ON)”.The FQD7N10LTF is a specific type of MOSFET that has an N-channel FET structure with a 10 Amp drain current rating and 100 Volt VDS rating. It is ideal for applications that require fast switching, low power dissipation, and low losses. The RDS(ON) of the device is 0.27Ω which is relatively low for excellent thermal performance.ApplicationsThe FQD7N10LTF is used in several applications where low power dissipation and low resistance are both necessary. Some of the most common applications of the FQD7N10LTF are used in switching power supplies, motor drives and other power applications.Due to its enhanced Avalanche Rated technology and low RDS(ON) resistance, the FQD7N10LTF is ideal for high-power, high-frequency switching designs. It is also best suited for applications where low switching losses and high efficiency are needed.ConclusionThe FQD7N10LTF is a versatile N-channel enhancement-mode MOSFET manufactured by Fairchild Semiconductor. It is used in applications that require fast switching, low power dissipation, and low resistance. With its 100V VDS rating, 10A continuous drain current rating and 0.27Ω RDS(ON) resistance, the FQD7N10LTF is suited for a variety of low to medium-power applications. Additionally, its VGS and Infineon Avalanche rated technologies provide improved thermal performance, extended operational life and greater reliability in high-speed switching designs.

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