FQD7N30TF Allicdata Electronics
Allicdata Part #:

FQD7N30TF-ND

Manufacturer Part#:

FQD7N30TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 300V 5.5A DPAK
More Detail: N-Channel 300V 5.5A (Tc) 2.5W (Ta), 50W (Tc) Surfa...
DataSheet: FQD7N30TF datasheetFQD7N30TF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: QFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 700 mOhm @ 2.75A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
FET Feature: --
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQD7N30TF is a popular Field Effect Transistor (FET) that is designed and manufactured by Fairchild Semiconductor, a leading supplier of design solutions in the field of power and analog electronics. FQD7N30TF features a single N-channel with a maximum drain current of 7A and a rated drain-source voltage of 30V. It is a 30V logic-level. This FET has a lower on-resistance (RDS(on)) and is ideal for applications that require higher efficiency, such as portable consumer and automotive electronics, or those applications that require a high conducting current. Additionally, the FQD7N30TF has a low input capacitance, which is advantageous for high-speed, high-frequency applications.

To understand how FQD7N30TF works, it is important to understand the principle of operation of a metal-oxide-semiconductor field-effect transistor (MOSFET). MOSFETs are unipolar transistors, meaning they are composed of only one type of electronic charge carriers, namely electrons and holes. They are commonly used as switches, amplifiers, and as voltage-controlled devices. In this case, the FQD7N30TF is an N-channel MOSFET, meaning it operates with electrons, and it is typically operated either in the cut-off mode (when the gate voltage is zero) or the saturation mode (when the gate voltage is greater than the threshold voltage). The conductivity is controlled by the gate voltage, and when the voltage is zero, electrons are prevented from flowing from the drain to the source. When the gate voltage exceeds the threshold voltage, electrons can pass from the drain to the source, thus increasing current flow.

The FQD7N30TF has a number of applications. It can be used in portable consumer and automotive electronics, providing increased efficiency and power savings. Additionally, its low input capacitance makes it suitable for use in high-speed, high-frequency applications. It can also be used as switches and amplifiers, allowing electrical currents to be regulated and amplified. The FQD7N30TF can also be used to control the voltage of a device, ensuring that it is operating at its specified level.

In conclusion, the FQD7N30TF is a versatile Field Effect Transistor (FET) designed by Fairchild Semiconductor. It features a single N-channel with a maximum drain current of 7A and a rated drain-source voltage of 30V. It has a lower on-resistance (RDS(on)) and is ideal for applications that require higher efficiency, such as portable consumer and automotive electronics. It also has a low input capacitance which is ideal for high-speed, high-frequency applications. The FQD7N30TF is used as switches, amplifiers, and voltage-controlled devices, and provides increased efficiency and power savings for portable and automotive electronics.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FQD7" Included word is 17
Part Number Manufacturer Price Quantity Description
FQD7N10TM ON Semicondu... -- 1000 MOSFET N-CH 100V 5.8A DPA...
FQD7P06TM_NB82050 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 60V 5.4A DPAK...
FQD7N20TM_F080 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 5.3A DPA...
FQD7P06TM_F080 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 60V 5.4A DPAK...
FQD7P20TM_F080 ON Semicondu... 0.0 $ 1000 MOSFET P-CH 200V 5.7A DPA...
FQD7N10LTF ON Semicondu... -- 1000 MOSFET N-CH 100V 5.8A DPA...
FQD7N20LTF ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 5.5A DPA...
FQD7N20TF ON Semicondu... -- 1000 MOSFET N-CH 200V 5.3A DPA...
FQD7N20TM ON Semicondu... -- 1000 MOSFET N-CH 200V 5.3A DPA...
FQD7P06TF ON Semicondu... -- 1000 MOSFET P-CH 60V 5.4A DPAK...
FQD7N30TF ON Semicondu... 0.0 $ 1000 MOSFET N-CH 300V 5.5A DPA...
FQD7P20TF ON Semicondu... -- 1000 MOSFET P-CH 200V 5.7A DPA...
FQD7P06TM ON Semicondu... -- 7500 MOSFET P-CH 60V 5.4A DPAK...
FQD7N30TM ON Semicondu... -- 1000 MOSFET N-CH 300V 5.5A DPA...
FQD7N20LTM ON Semicondu... -- 1000 MOSFET N-CH 200V 5.5A DPA...
FQD7P20TM ON Semicondu... -- 10000 MOSFET P-CH 200V 5.7A DPA...
FQD7N10LTM ON Semicondu... -- 5000 MOSFET N-CH 100V 5.8A DPA...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics