Allicdata Part #: | FQD7N30TF-ND |
Manufacturer Part#: |
FQD7N30TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 300V 5.5A DPAK |
More Detail: | N-Channel 300V 5.5A (Tc) 2.5W (Ta), 50W (Tc) Surfa... |
DataSheet: | FQD7N30TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 2.75A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 610pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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FQD7N30TF is a popular Field Effect Transistor (FET) that is designed and manufactured by Fairchild Semiconductor, a leading supplier of design solutions in the field of power and analog electronics. FQD7N30TF features a single N-channel with a maximum drain current of 7A and a rated drain-source voltage of 30V. It is a 30V logic-level. This FET has a lower on-resistance (RDS(on)) and is ideal for applications that require higher efficiency, such as portable consumer and automotive electronics, or those applications that require a high conducting current. Additionally, the FQD7N30TF has a low input capacitance, which is advantageous for high-speed, high-frequency applications.
To understand how FQD7N30TF works, it is important to understand the principle of operation of a metal-oxide-semiconductor field-effect transistor (MOSFET). MOSFETs are unipolar transistors, meaning they are composed of only one type of electronic charge carriers, namely electrons and holes. They are commonly used as switches, amplifiers, and as voltage-controlled devices. In this case, the FQD7N30TF is an N-channel MOSFET, meaning it operates with electrons, and it is typically operated either in the cut-off mode (when the gate voltage is zero) or the saturation mode (when the gate voltage is greater than the threshold voltage). The conductivity is controlled by the gate voltage, and when the voltage is zero, electrons are prevented from flowing from the drain to the source. When the gate voltage exceeds the threshold voltage, electrons can pass from the drain to the source, thus increasing current flow.
The FQD7N30TF has a number of applications. It can be used in portable consumer and automotive electronics, providing increased efficiency and power savings. Additionally, its low input capacitance makes it suitable for use in high-speed, high-frequency applications. It can also be used as switches and amplifiers, allowing electrical currents to be regulated and amplified. The FQD7N30TF can also be used to control the voltage of a device, ensuring that it is operating at its specified level.
In conclusion, the FQD7N30TF is a versatile Field Effect Transistor (FET) designed by Fairchild Semiconductor. It features a single N-channel with a maximum drain current of 7A and a rated drain-source voltage of 30V. It has a lower on-resistance (RDS(on)) and is ideal for applications that require higher efficiency, such as portable consumer and automotive electronics. It also has a low input capacitance which is ideal for high-speed, high-frequency applications. The FQD7N30TF is used as switches, amplifiers, and voltage-controlled devices, and provides increased efficiency and power savings for portable and automotive electronics.
The specific data is subject to PDF, and the above content is for reference
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