NTK3134NT5G

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The NTK3134NT5G is a high-performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that used for switching, level-shifting and other linear and nonlinear applications. It is a single, low-power device that performs exceptionally well over a wide range of operating conditions. This article aims to discuss the application field and working principle of the NTK3134NT5G.

The NTK3134NT5G has an integrated G-S circuit with two complementary MOSFETs, connected in parallel. This allows the device to operate up to 400V and to carry up to 5A currents. The device has a peak output current of 25A, making it ideal for efficient current control applications such as motor control, lighting systems or DC-DC power supplies. It also has a low on-resistance of 1.4Ω for low voltage drops, and a high breakdown voltage of 400V for high power applications. The device also has fast switching capabilities, with a turn-on time of only 100ns, and an off-time of 16ns.

The NTK3134NT5G has an all-silicon semiconductor technology that enables the device to operate at low power consumption, allow for lower noise, and improved efficiency. The device has a low thermal resistance of 2°C/W, which enables it to dissipate heat quickly and efficiently. Additionally, the device has a built-in ESD (ElectroStatic Discharge) protection circuit and low EMI (Electromagnetic Interference).

The NTK3134NT5G’s working principle is basic and straightforward. The device integrates two MOSFETs to form a complementary G-S circuit, which is connected in parallel. When a voltage or current is applied to the gate of the MOSFET, the channel between the source and the drain is created. The channel is used to conduct current. When a zero voltage is applied to the gate, the channel is no longer conductive, thus blocking the current.

The NTK3134NT5G is exceptionally well-suited for applications such as motor control, DC-DC power supplies, lighting systems and other level-shifting and switching applications. Additionally, it is ideal for high power applications with its high breakdown voltage and fast switching capabilities. The low thermal resistance and EMC properties make it suitable for use in a variety of environments.

In conclusion, the NTK3134NT5G is a versatile single device that performs exceptionally well in a broad range of applications. It has a wide range of features, such as high breakdown voltage, fast switching capabilities, low on-resistance and low power consumption, making it a perfect choice for various level-shifting and switching applications. The integrated G-S circuit with two parallel MOSFETs makes it a very reliable and efficient device for its purpose.

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