FQD7N10TM Discrete Semiconductor Products

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FQD7N10TM is a type of Field Effect Transistor (FET). FETs are unipolar semiconductor devices which are used in applications requiring low current input and output currents. The FQD7N10TM is a single Metal Oxide Semiconductor FET (MOSFET) and is available in different packages. This article describes the applications and working principle of FQD7N10TM.

The FQD7N10TM can be used to control the movement of electrons through a channel by applying a voltage to a gate. The device consists of a source, drain and gate, which are referred to as terminals. When a voltage is applied to the gate terminal, a conductive channel is created between the source and drain. This channel is called an electron conductive channel or an inversion layer. The gate-to-source voltage is known as the threshold voltage of the MOSFET.

The FQD7N10TM is used in a wide variety of applications such as switching, amplifying, protecting, or controlling the current or voltage in a circuit. Some of the most common applications include switching power supplies, motor drives, amplifier circuits, and light dimmer circuits. The FQD7N10TM can also be used as a simple on/off switch or as an analog signal conditioning device.

The FQD7N10TM is a drive transistor with an on-state resistance of 9.1 ohms. This device has an average turn-on time of 25 ns, an average turn-off time of 8 ns, and an operating junction temperature range of -55°C to +150°C. It also features superior thermal performance with a low package thermal resistance of 0.30°C/W.

The FQD7N10TM works on the principle of electrostatic control. When a voltage is applied to the gate terminal, a field is created in the gate-channel region. This field creates an inversion layer at the interface of the silicon substrate and the gate oxide layer. The electrons in the inversion layer are repelled by the positive voltage applied to the gate terminal. This action affects the conduction of the electrons across the channel, allowing the device to control the current flow between the source and the drain.

The FQD7N10TM device is manufactured with a high level of quality assurance. It has been tested for a wide range of performance parameters including drain-source breakdown voltage and gate leakage. The device also features a low stand-by power consumption, which makes it ideal for low power applications.

In summary, the FQD7N10TM is a single MOSFET that is used in a variety of applications. It works on the principle of electrostatic control and features superior thermal performance, low power consumption, and high level of quality assurance. This device can be used in switching power supplies, motor drives, amplifier circuits, and light dimmer circuits, among other applications.

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