Allicdata Part #: | NX2301PVL-ND |
Manufacturer Part#: |
NX2301PVL |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CHANNEL 20V 2A TO236AB |
More Detail: | P-Channel 20V 2A (Ta) 400mW (Ta) Surface Mount TO-... |
DataSheet: | NX2301PVL Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04162 |
Series: | Automotive, AEC-Q101 |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 400mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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NX2301PVL is an N-Channel Enhancement Mode MOSFET. This transistor provides a low gate-to-source capacitance and low on-state resistance. It is commonly used in power management and switching applications, and is designed for a wide range of industrial and automotive applications.
Introduction to NX2301PVL
The NX2301PVL is a standard voltage type N-Channel Enhancement Mode MOSFET. It is designed to provide exceptional low gate-to-source capacitance while still offering low on-state resistance. This allows it to provide excellent fast switching performance, making it suitable for many different types of high speed operations. Its wide operational range also makes it suited to a wide range of applications, including power management and switching applications.
Application Fields of NX2301PVL
The NX2301PVL can be used in a wide variety of applications, including industrial and automotive applications. In industrial applications, the NX2301PVL can be used in motor control circuits, multi-regulated power supplies, load regulation circuits and synchronization circuits. In automotive applications, it can be used in power window control systems, power door locks, power seat control systems, electronic instrumentation and electronic door locks. It is also a suitable choice for many power switching applications, such as DC-DC converters, buck converters, boost converters and load switches.
Working Principle of NX2301PVL
The working principle of the NX2301PVL is based on the enhancement mode field effect transistor (MOSFET). It is primarily composed of a source, drain and gate. When a voltage is applied to the gate, it creates an inversion region in the channel between the source and drain. This inversion region will allow current to flow between the source and the drain. The size of this inversion region is determined by the applied voltage. The NX2301PVL is designed to have a very low gate-to-source capacitance, allowing it to switch rapidly between on and off states.
Conclusion
The NX2301PVL is a robust N-Channel Enhancement Mode MOSFET designed for a wide range of applications. It provides low gate-to-source capacitance for excellent fast switching performance and low on-state resistance for improved efficiency. It is suitable for many different types of industrial and automotive applications, such as motor control circuits, multi-regulated power supplies, power window control systems, power door locks, power seat control systems and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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