NX2301P,215 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.1V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	400mW (Ta), 2.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	380pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 4.5V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	120 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NX2301P.215 Application Field and Working Principle

The NX2301P.215 Transistor is designed for use in a variety of applications, ranging from audio amplification to high-speed switching and control. This transistor has a fast switching speed and a low on-resistance, making it ideal for switching applications. Additionally, the tight control that this transistor has over current flow makes it a great choice for audio amplifiers and other complex circuits. The following sections provide an overview of the application fields and working principle of the NX2301P.215 Transistor.

Application Fields

The NX2301P.215 Transistor is a single source, low voltage, MOSFET-based transistor. Due to its capabilities, this transistor is suited for many different applications. In high-speed and power MOSFET applications, the NX2301P.215 Transistor can be used to replace high-frequency, complex, low-power circuits with a single, low-cost, high-power device. This simplifies design and enhances the overall performance of the circuit. The NX2301P.215 Transistor is also used in power management circuits, providing quick action and precise control over current flow.The NX2301P.215 Transistor\'s high-switching speed and low on-resistance make it an ideal choice for audio amplifiers and other applications that require both low distortion and high dynamic range. Due to its low voltage operation, this transistor is also a great choice for use in portable and automotive electronics.

Working Principle

The NX2301P.215 Transistor is based on a field effect transistor (FET) construction. Using this technology, the transistor acts as a switch, allowing current to flow between its source and drain terminals when its gate terminal is driven by a positive voltage. When the gate voltage is zero, then the transistor is off, and current does not flow. This principle is used in many different applications. In audio amplifiers, the NX2301P.215 Transistor can be used to quickly switch a signal between its source and drain terminals. This enables precise control over the audio signal, and helps reduce any distortions that could arise. For high-speed power switching applications, the transistor is used to quickly open and close a circuit, allowing for precise control of current flow. In power management circuits, the NX2301P.215 Transistor is used to quickly switch a high-powered load on and off without affecting the rest of the circuit. This helps reduce power consumption, particularly in portable and automotive electronics where space and heat are both significant considerations.

Conclusion

The NX2301P.215 Transistor is a single source, low voltage MOSFET-based transistor. It benefits from a fast switching speed, low on-resistance, and precise control over current flow, making it well-suited for many different applications. These include power management circuits, audio amplifiers, and high-speed power switching circuits. It is also a great choice for automotive and portable electronics, due to its low voltage operation. Overall, the NX2301P.215 Transistor is perfect for applications that require both performance and precision.

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