1N3263R Allicdata Electronics
Allicdata Part #:

1N3263R-ND

Manufacturer Part#:

1N3263R

Price: $ 33.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: DIODE GEN PURP 200V 160A DO205AB
More Detail: Diode Standard 200V 160A Chassis, Stud Mount DO-20...
DataSheet: 1N3263R datasheet1N3263R Datasheet/PDF
Quantity: 1000
30 +: $ 30.48190
Stock 1000Can Ship Immediately
$ 33.87
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 160A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 12mA @ 200V
Capacitance @ Vr, F: --
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N3263
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A 1N3263R rectifier diode is a type of diode used for rectification; it converts alternating current (AC) to direct current (DC). A diode works as a one-way street for electric current, letting current flow in only one direction. It is composed of three parts: the semiconductor, an anode and a cathode. The semiconductor or junction between the anode and cathode is where the majority of the rectification takes place.

1N3263R rectifier diodes are designed and used as high current rectifiers in power supplies, battery chargers, inverters and voltage-regulated DC-to-DC converters due to their high current rating, low leakage current and excellent reliability. They offer a high switching speed, enabling them to withstand high surge currents, making them an excellent choice for use in various power electronics applications.

In addition to power electronics, 1N3263R rectifier diodes are also used in circuit protection. Their fast switching speeds make them suitable for use in protecting sensitive electronics from over-current or over-voltage conditions. They can also be used to reduce signal noise in radio frequency applications.

The working principle behind a 1N3263R rectifier diode is based on the PN junction. A PN junction is a type of semiconductor junction composed of a p-type semiconductor and a n-type semiconductor. When the junction formed by the two materials is forward biased, current flows through the diode, allowing current to pass through in the forward direction. However, when the junction is reverse biased, the current flow is reversed and the diode does not allow current to pass through.

The current that is allowed to pass through in the forward direction is limited by the forward voltage of the diode, which is directly proportional to the temperature. As the temperature increases, the forward voltage of the diode increases, limiting the current that is allowed to pass through. The reverse voltage of the 1N3263R diode is limited to the reverse breakdown voltage of the diode, which is usually much less than the forward voltage.

In summary, 1N3263R rectifier diodes are used in high current rectification applications as well as circuit protection applications. They are characterized by a high current rating, low leakage current and high switching speeds, making them an excellent choice for use in a variety of power electronics and radio frequency applications. Their working principle is based on the PN junction and the current that passes through is limited by the forward and reverse voltage of the diode.

The specific data is subject to PDF, and the above content is for reference

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