
Allicdata Part #: | 1N4001E-E3/54GITR-ND |
Manufacturer Part#: |
1N4001E-E3/54 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 50V 1A DO204AL |
More Detail: | Diode Standard 50V 1A Through Hole DO-204AL (DO-41... |
DataSheet: | ![]() |
Quantity: | 1000 |
22000 +: | $ 0.02766 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -50°C ~ 150°C |
Base Part Number: | 1N4001 |
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Introduction to 1N4001E-E3/54 Diodes
The 1N4001E-E3/54 is a high performance rectifier diode from the family of single diodes. It is designed for fast switching applications and for operation in a wide range of temperatures. The diode is made from silicon and has a basically symmetric current-voltage characteristic. This diode can therefore be used in a wide range of rectifier applications. Examples of its applications include use in AC-DC power supplies, DC motor control, and the protection and clamping of overvoltage and transient protection.
Construction and Operating Voltage of 1N4001E-E3/54
The 1N4001E-E3/54 can be classified as a two terminal device, which comprises of a cathode and an anode. The diode includes a silicon chip, which is connected to the two external terminals and a small amount of doping for the current conduction. The conducting element of the diode is made of N-type silicon. The diode can handle a peak repetitive reverse voltage up to 100 volts and a continuous forward current of 1 ampere.
Working Principle and Application of 1N4001E-E3/54
The 1N4001E-E3/54 works on the principle of minority and majority carriers. The diode consists of two regions: N-type for the majority carriers, and P-type for the minority carriers. This structure creates a P-N junction. When a voltage is applied to the diode, it produces an electric field which causes the majority carriers in the N-region to move toward the P-region, and the majority carriers in the P-region to move toward the N-region. This causes a current to flow in one direction and the diode to operate as a rectifier.
The 1N4001E-E3/54 is mainly used in rectifier applications, AC-DC power supplies, motor control, and overvoltage and transient protection due to its high reverse voltage and forward current ratings. Other uses for this diode include signal trimming, and for turning alternating current into direct current when used with a capacitor and a power supply. Because of its low voltage drop and high speed, it is also ideal for small and medium power supplies.
Conclusion
The 1N4001E-E3/54 is an efficient and reliable diode, which is capable of handling a wide range of temperatures and operating voltages. It can be used in many applications, such as AC-DC power supplies, DC motor control, and overvoltage and transient protection. The diode is made of low-cost materials making it an affordable choice for many commercial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N4002GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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1N4007GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 1A DO204AL... |
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1N4002GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4003-N-2-2-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4001G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4006L-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4003-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4004E-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4001GPE-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4006-N-0-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4006GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4005GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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1N4099UR-1 | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
1N4007-TP | Micro Commer... | 0.01 $ | 1055000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001GPEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4002 TR | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO41Dio... |
1N4006GHB0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4002RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4002-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007-N-2-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO-... |
1N4003-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
1N4007-E3/73 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 1KV 1A DO2... |
1N4004GPEHE3/91 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4004GPE-E3/91 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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