Allicdata Part #: | 1N4006RLGOSTR-ND |
Manufacturer Part#: |
1N4006RLG |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 800V 1A AXIAL |
More Detail: | Diode Standard 800V 1A Through Hole Axial |
DataSheet: | 1N4006RLG Datasheet/PDF |
Quantity: | 5000 |
5000 +: | $ 0.01932 |
10000 +: | $ 0.01680 |
25000 +: | $ 0.01512 |
50000 +: | $ 0.01344 |
125000 +: | $ 0.01120 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N4006 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
1N4006RLG is a fast recovery rectifier that falls under the category of single diodes. It is especially suited for applications that demand good performance under all temperatures. This device is designed to be used in power circuits in order to protect them from damage caused by overheating, spikes or short-circuits. It also helps to reduce the amount of power consumed as well as extend the lifespan of circuits and components. The 1N4006RLG device is composed of an anode and a cathode, connected by a diode layer and a resistor. The anode is the positive terminal which accepts the current, while the cathode is the negative terminal which conducts the current away. The diode layer inside the device acts as a switch that prevents the current from flowing in the opposite direction. This prevents current spikes and reduces power consumption. In terms of application fields, the 1N4006RLG diode can be used in a variety of power supply applications and as protection devices in AC power circuits, general-purpose rectifiers, bridge rectifiers, and motor speed control circuits. This device can also be used in automotive electronic systems such as fuel injector systems and electronic power steering. The working principle of a 1N4006RLG diode is based on the fact that materials like silicon are not ideal conductors of electricity. Instead, they only conduct electricity in one direction and block it from flowing in the reverse direction. Silicon materials form a diode layer that only allows current to flow from the anode to the cathode. This makes them ideal for use in rectifier circuits, as the current can be directed in one direction and the power consumed is minimized. When the voltage applied to the 1N4006RLG exceeds its rated peak reverse voltage (PRV), the diode becomes reverse biased and the current that flows from the anode to the cathode is blocked. This limits the amount of voltage that is applied to the circuit and prevents damage caused by overloads or short-circuits. This feature makes the 1N4006RLG device highly advantageous in power supply applications as it can effectively protect the components and the circuit. In conclusion, the 1N4006RLG is an ideal choice for a wide range of applications such as power supply, automotive and rectifier circuits. Its features such as good performance under low and high temperatures, low power consumption and its ability to protect circuits from damage makes it an ideal choice for protecting circuits from short-circuits and overloads.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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