Allicdata Part #: | 1N4005CSTR-ND |
Manufacturer Part#: |
1N4005 TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE GEN PURPOSE DO41 |
More Detail: | Diode Standard 600V 1A Through Hole DO-41 |
DataSheet: | 1N4005 TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes are a type of electronic device that is used to limit electric current in an electrical circuit and can act as a rectifier for AC-current. The 1N4005 is a type of diode that specifically serves as a rectifier for single-phase AC-current, making it a perfect application for many electrical systems. It is also able to handle high DC-currents, albeit with relatively low peak-inverse-voltages, making it ideal for a variety of projects. This article will discuss the application field of the 1N4005 and its basic working principles.
First of all, the 1N4005 is a diode specifically designed for low-voltage AC-current rectification. It is a type of silicon diode designed to handle an average DC-current of up to 0.5A with up to 52V of peak-inverse-voltages, making it perfect for most low-voltage single-phase AC-current applications. This makes it ideal for applications such as AC/DC adapters, transformers, converters, boost converters, and more.
The 1N4005\'s low power handling capability makes it well-suited for projects that require regular current shaping over long periods of time, such as in battery bank topologies or trickle chargers. The low power handling makes the 1N4005 perfect for the majority of projects that need to manage current pace and facilitate energy efficient conversion.
When it comes to the working of the 1N4005, it relies on a basic principle of semiconductor-based rectification. In essence, it limits electric current by allowing it to flow in one direction only; this is known as the "forward bias" in electrical engineering terms. For this purpose, the 1N4005 is made up of two p-type and n-type semiconductor layers, with the p-type (positive) end to act as the cathode and the n-type (negative) side to act as the anode.
When a DC-voltage or positive AC-current is applied to the 1N4005, the current will flow from the anode terminal to the cathode terminal, the diode in effect becoming a resistor for the current. This is the forward bias state. On the other hand, when a negative AC-current is applied to the diode, the current will not flow between the two terminals and the diode will essentially become an open circuit.
The 1N4005 is designed to remain in this open-circuit state until the voltage is reversed and it can transition back to its forward bias state efficiently. This state is known as the peak-inverse-voltage (or PIV). This is a crucial feature that allows it to act as a rectifier, translating primarily AC-current into usable DC-current.
In conclusion, the 1N4005 is a type of rectifier that can effectively turn AC-current into usable DC-current, making it perfect for low-voltage applications. It is an incredibly efficient device, and is able to handle peak-inverse-voltages up to 52V with a maximum average DC-current of 0.5A. Its working principle relies on the principle of forward and reverse bias, allowing it to transition between open-circuit and closed-circuit states in a very efficient manner.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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