| Allicdata Part #: | 641-1973-ND |
| Manufacturer Part#: |
1N4002B-G |
| Price: | $ 0.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Comchip Technology |
| Short Description: | DIODE GEN PURP 100V 1A DO41 |
| More Detail: | Diode Standard 100V 1A Through Hole DO-41 |
| DataSheet: |  1N4002B-G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.10080 |
| 10 +: | $ 0.09513 |
| 100 +: | $ 0.06218 |
| 500 +: | $ 0.03039 |
| 1000 +: | $ 0.02072 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 5µA @ 100V |
| Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-41 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | 1N4002 |
Description
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1N4002B-G is a single type silicon rectifier diode. It is used in the development of several electronic circuits due to its suitability for rectification, switching and protection purposes. It has a wide range of applications such as AC-DC conversion, electronic power supplies, circuit protection and other applications.The 1N4002B-G is through-hole type devices made from Silicon with a maximum forward current of 1.0A. The 1N4002B-G provides reverse voltage protection up to 400V and withstands peak surge current up to 30A for brief periods of time. It also has low forward voltage drop, which makes it ideal for general-purpose applications.The 1N4002B-G is a simple device that consists of two rectifying diodes, one on the anode and the other on the cathode. The anode is connected to the positive supply and the cathode is connected to the negative supply. When the anode is made positive, the diode on it becomes forward biased and conducts electricity to the cathode. However, when the cathode is made positive, the diode on it becomes reverse biased and blocks the current flow.The working principle of the 1N4002B-G is based on electrophoresis or diode junction. When the diode is forward biased, the electrostatic field in the diode junction is set up and the majority carriers are forced to cross the junction and hence, current flows through the diode. On the other hand, when the diode is reverse biased, no current flows through the diode as the electrostatic field is not set up.The 1N4002B-G has numerous applications. In AC-DC conversion, it is used to convert alternating current (AC) to direct current (DC). It is also used in low voltage and signal regulating, analog and digital circuits, switching circuits, and the reverse power protection of devices connected to the AC mains. It is also find its way in LED lighting systems, automotive electronics, electronic energy-saving bulbs, electric machines and electronic low voltage control.The 1N4002B-G is also used in switching power supplies, charging circuits and temperature controls. As it has a low forward voltage drop and high breakdown voltage, it is suitable for high voltage, high frequency, and high power applications. The 1N4002B-G is also suitable for the LIDAR (Light Detection and Ranging) system for the geological survey, agricultural and military applications.In conclusion, the 1N4002B-G is a single type silicon rectifier diode, which is used in the development of several electronic circuits due to its suitability for rectification, switching, and protection purposes. It has a wide range of applications such as AC-DC conversion, low voltage and signal regulating, analog and digital circuits, switching circuits, LED lighting systems, automotive electronics, and electric machines etc. The 1N4002B-G has low forward voltage drop and high breakdown voltage which make it suitable for high voltage, high frequency, and high power applications.
The specific data is subject to PDF, and the above content is for reference
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