| Allicdata Part #: | 1N4003E-E3/53-ND |
| Manufacturer Part#: |
1N4003E-E3/53 |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 200V 1A DO204AL |
| More Detail: | Diode Standard 200V 1A Through Hole DO-204AL (DO-4... |
| DataSheet: | 1N4003E-E3/53 Datasheet/PDF |
| Quantity: | 1000 |
| 18000 +: | $ 0.04952 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 5µA @ 200V |
| Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-204AL (DO-41) |
| Operating Temperature - Junction: | -50°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
1N4003E-E3/53 is a small-signal, ultra-fast rectifier diode. It is designed for high-speed switching applications such as switching power supplies and other high frequency applications. The 1N4003E-E3/53 has a low leakage current, low junction capacitance, and a fast switching speed which allows it to be used in high-frequency switching circuits.
Application Field
The 1N4003E-E3/53 is widely used in power electronics such as power supply and voltage regulator, data communication line protection, switching diode circuits, and other switching applications. It can also be used in rectifier bridges, line filters, and AC-DC and DC-DC converters. In addition, the 1N4003E-E3/53 is used in the production of various optoelectronic devices such as LEDs, diodes, and transistors.
Working Principle
The 1N4003E-E3/53 is a unidirectional device that allows current to flow in one direction only. When the anode/cathode voltage is below the threshold level, the 1N4003E-E3/53 will not allow current to flow. When the anode/cathode voltage is above the threshold level, the 1N4003E-E3/53 will allow the current to flow. This is because the two junctions in the 1N4003E-E3/53 allows the electrons to move freely through the semiconductor material. The 1N4003E-E3/53’s fast switching speed makes it ideal for high-frequency switching applications.
The 1N4003E-E3/53 consists of three major components: the diode die, the package, and the anode/cathode mechanism. The diode die is the active region of the device, which is composed of a semiconductor material. The package is the protective isolation shell for the diode die, which allows for safer, longer-term use. The anode/cathode mechanism is the electrical contacts that allow enough current to flow for proper switching.
The 1N4003E-E3/53 is also very efficient when it comes to energy savings. The device only uses as much current as is needed to function properly. This helps reduce energy costs and also helps to reduce the overall strain on a system.
Reliability
The 1N4003E-E3/53 is designed to withstand harsh environmental conditions, making it a reliable choice for any application. It is also resistant to high temperatures, which also makes it suitable for use in high-temperature applications. It has a low-temperature coefficient, which indicates its reliability at varying temperatures. The device is also reverse-polarity tolerant, which ensures that current will not flow backward in the event of incorrect polarity. The 1N4003E-E3/53 is also highly resistant to thermal shock, making it a great choice for different applications.
Conclusion
The 1N4003E-E3/53 is an ideal diode for any switching application. It has a low leakage current and a fast switching speed that make it perfect for high-frequency applications. The 1N4003E-E3/53 is also reliable and comes with a protective package for increased safety. It is also resistant to high temperatures and thermal shock, making it a great choice for different applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N4004-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N4003/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4001-B | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
| 1N4005 TR | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO41Dio... |
| 1N4003G R0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4004GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
| 1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
| 1N4002G R1G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N4002G R0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N4001GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N4003GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4006/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N4007GHB0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 1A DO204AL... |
| 1N4001E-E3/54 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N4003GP | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4006 BK | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N4003GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4003GPEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4003GPHM3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4001TA | SMC Diode So... | 0.02 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
| 1N4001G R0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N4005G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N4095 | Microsemi Co... | 0.0 $ | 1000 | DIODE ZENER 280MW DO-7Zen... |
| 1N4005-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N4005-N-2-4-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
| 1N4003G R1G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4006-N-2-2-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N4005GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N4007GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| 1N4003GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...
1N4003E-E3/53 Datasheet/PDF