| Allicdata Part #: | 1N4005B-G-ND |
| Manufacturer Part#: |
1N4005B-G |
| Price: | $ 0.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Comchip Technology |
| Short Description: | DIODE GEN PURP 600V 1A DO41 |
| More Detail: | Diode Standard 600V 1A Through Hole DO-41 |
| DataSheet: | 1N4005B-G Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.02214 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 5µA @ 600V |
| Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-41 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | 1N4005 |
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1N4005B-G diodes belong to the family of single rectifiers, used in a wide range of applications. They are widely used in power supplies, voltage multipliers, and rectifier circuity, and are often used in protecting the outputs from excessive voltages or loads. They can be found in many electronic devices, from laptop chargers and printers, to solar powered gadgets. While most people are familiar with the basic operation of this device, its application field and working principle is worth more detailed examination.
The 1N4005B-G is a general purpose diode, designed to handle higher current and voltages than standard diodes. It has an average forward current rating of 1 Amp and a peak reverse voltage of 400V, and can be used to guard against surges and spikes. It is constructed using a single layer of p-type silicon, and has a low forward voltage drop that helps to reduce power losses. It is also designed to have a low leakage current and a wide temperature range.
The application field of the 1N4005B-G diode include power supplies, LED lighting, radio equipment, telecoms, industrial controls, and much more. The high breakdown voltage makes it suitable for industrial applications where higher voltages are involved. It can also be used for protection against transients and surges, providing an effective barrier to high voltage spikes, making it an essential part of any electronic circuit.
The 1N4005B-G diode works on the basic principle of semiconductor conduction, where a current carried by charge carriers can be controlled by varying the potential difference across the device. In the case of this type of diode, a large reverse voltage applied across the terminals will cause a current to flow in the reverse direction, while blocking any current flow in the forward direction.
The 1N4005B-G can be used as a rectifier, converting alternating current to direct current. It also acts as a switch, turning on and off current when the voltage falls below a certain level, thus protecting against over voltages or loads. In summary, the 1N4005B-G diode is an invaluable component in the design of a wide range of electronics, providing stability, protection and effective rectification.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N4004-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N4003/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4001-B | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
| 1N4005 TR | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO41Dio... |
| 1N4003G R0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4004GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
| 1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
| 1N4002G R1G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N4002G R0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N4001GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N4003GP-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4006/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N4007GHB0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 1A DO204AL... |
| 1N4001E-E3/54 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N4003GP | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4006 BK | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N4003GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4003GPEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4003GPHM3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4001TA | SMC Diode So... | 0.02 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
| 1N4001G R0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N4005G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N4095 | Microsemi Co... | 0.0 $ | 1000 | DIODE ZENER 280MW DO-7Zen... |
| 1N4005-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N4005-N-2-4-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
| 1N4003G R1G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N4006-N-2-2-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N4005GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N4007GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| 1N4003GP-M3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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1N4005B-G Datasheet/PDF