
Allicdata Part #: | 1N4049PX-ND |
Manufacturer Part#: |
1N4049 |
Price: | $ 40.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | DIODE GEN PURP 300V 275A DO205AB |
More Detail: | Diode Standard 300V 275A Chassis, Stud Mount DO-20... |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 36.71320 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 275A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 15mA @ 300V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-205AB, DO-9, Stud |
Supplier Device Package: | DO-205AB, DO-9 |
Operating Temperature - Junction: | -65°C ~ 190°C |
Base Part Number: | 1N4049 |
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1N4049 – Application Field and Working Principle
The 1N4049 is a single diode rectifier. It is part of the IN4xxx series of diodes from NXP Semiconductors. They are used in many different types of applications, often as a voltage reference or for voltage clamping. The 1N4049 is an ideal choice for many applications due to its low forward voltage drop and high-speed switching capabilities.
The 1N4049 is a silicon-based diode with packaging in a TO-92 housing. It has a reverse blocking voltage of 45V and a Forward voltage at a rated current of 7V. The diode has a rated current of 5A, with a peak pulse current rating of 50A, and a maximum peak power dissipation of 4W. The forward voltage drop characteristic, measured with a pulse injection method, is between 0.4 and 1V.
The 1N4049 is typically used in the following applications:
- Voltage Reference – It acts as an adjustable voltage reference for circuit designs.
- Voltage Clamping – The high blocking voltage of the diode allows for high voltage clamping.
- Overvoltage Protection – It is often used in power supply applications to protect circuits from overvoltage.
- Power Relay – It can be used in inductive circuits to switch power off and on.
- Output Protection – It can be used to protect output devices such as transistors.
The basic principle of operation of a diode rectifier is based on the behavior of a PN junction device. A PN junction is formed when two different types of semiconductor material are joined together. When a forward bias voltage is applied to the junction, electrons and holes move across the junction and recombine. This process is called recombination current, and it is what allows the diode to conduct.
The diode will only conduct when the voltage across the junction is greater than the forward voltage drop. This forward voltage drop is a function of the diode type, and can vary from diode to diode. The 1N4049 has a forward voltage drop of 0.4 – 1V. In order for the diode to be used for voltage clamping, the voltage across the junction must be greater than the rated blocking voltage of the diode. The 1N4049 has a rated blocking voltage of 45V.
The 1N4049 is a versatile and reliable diode rectifier. It is used in many different types of applications, including voltage reference, voltage clamping, overvoltage protection, power relays, and output protection. Its low forward voltage drop, high blocking voltage, and high-speed switching capabilities make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002E-E3/54 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4005GL BK | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4002GPE-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007GPE-E3/53 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N4006GP-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4007GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 1A DO204AL... |
1N4004GP-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4002GL-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4003-N-2-2-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4001G B0G | Taiwan Semic... | 0.03 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4006L-T | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4003-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4004E-E3/73 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4001GPE-M3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4006-N-0-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4006GHA0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4005GPHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N4055R | Powerex Inc. | 48.46 $ | 1000 | DIODE GEN PURP 900V 275A ... |
1N4099UR-1 | Microsemi Co... | 2.58 $ | 1000 | ZENER DIODEZener Diode |
1N4007-TP | Micro Commer... | 0.01 $ | 1055000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001GPEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4002 TR | Central Semi... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO41Dio... |
1N4006GHB0G | Taiwan Semic... | 0.02 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N4002RL | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4002-N-0-1-BP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N4007-N-2-3-AP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO-... |
1N4003-E3/54 | Vishay Semic... | -- | 11000 | DIODE GEN PURP 200V 1A DO... |
1N4007-E3/73 | Vishay Semic... | -- | 18000 | DIODE GEN PURP 1KV 1A DO2... |
1N4004GPEHE3/91 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4004GPE-E3/91 | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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