| Allicdata Part #: | 1N4554RB-ND |
| Manufacturer Part#: |
1N4554RB |
| Price: | $ 22.59 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 6.2V 500MW DO5 |
| More Detail: | Zener Diode 6.2V 500mW ±5% Chassis, Stud Mount DO-... |
| DataSheet: | 1N4554RB Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 20.32860 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 6.2V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 0.14 Ohms |
| Current - Reverse Leakage @ Vr: | 20µA @ 2V |
| Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 10A |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Chassis, Stud Mount |
| Package / Case: | DO-203AB, DO-5, Stud |
| Supplier Device Package: | DO-5 |
| Base Part Number: | 1N4554 |
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1N4554RB is a high performance zener diode, which has high applicability for reverse voltage regulation. It is a commonly used device for low current operating circuits, as well as in low temperature applications.
The working principle of the 1N4554RB is based on the flow of electrons through the diode junction when forward biased. When the diode’s anode is forward biased with a positive DC voltage, electrons flow through the diode junction and out of the anode. This flow of electrons is known as forward bias.
When the reverse bias of the diode is greater than its breakdown voltage, the electrons start to flow in reverse direction (from cathode to anode) to maintain the same current. This effect is known as the reverse breakdown voltage and further reduces the overall temperature coefficient of the device.
The 1N4554RB has been used in a wide range of applications, including current regulation, voltage regulation, logic gates and power supply protection. This diode is ideal for use in low power applications such as DC converters, test equipment, medical equipment, automotive electronics, instrumentation, power supplies and motor control circuits.
As a current-sensing Zener diode, the working principle of the 1N4554RB involves the tunneling of electrons across the diode junction when a reverse bias is applied. The electron traveling past the depletion layer is known as the Zener current and the depletion layer increases in width allowing more electrons to pass through which decreases the breakdown voltage.
The 1N4554RB also offers high stability and accuracy of voltage regulation. This is achieved by utilizing the forward voltage drop of the diode, which is proportional to the anode current. This ensures that the regulated voltage is maintained within the specified range even at varying conditions.
In summary, the 1N4554RB is an optimal choice for various current regulation, voltage regulation, and logic gate applications. It has an adjustable breakdown voltage and is suitable for use in low power applications such as DC converters, test equipment, medical equipment, automotive electronics, instrumentation, power supplies and motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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1N4554RB Datasheet/PDF