1N4595 Allicdata Electronics
Allicdata Part #:

1N4595GN-ND

Manufacturer Part#:

1N4595

Price: $ 15.30
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE GEN PURP 1.2KV 150A DO205
More Detail: Diode Standard 1200V 150A Chassis, Stud Mount DO-2...
DataSheet: 1N4595 datasheet1N4595 Datasheet/PDF
Quantity: 1000
50 +: $ 13.76450
Stock 1000Can Ship Immediately
$ 15.3
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 4mA @ 1200V
Capacitance @ Vr, F: --
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C
Base Part Number: 1N4595
Description

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1N4595 is a single-phase silicon rectifier diode. It has a plastic package that features fast recovery time, soft reverse recovery characteristics, and low noise characteristics. It is ideal for a wide range of applications such as low-voltage power supplies, inverters, polarity protection, and snubber networks. This article will explore the 1N4595\'s application field, working principle, and features.

Application Field and Working Principle

1N4595 is a general-purpose rectifier diode widely used in power supplies, inverters, polarity protection, and snubber networks. It is primarily designed to switch AC power with a wide range of specifications. The maximum current rating of 1N4595 is 100 A with an extended heatsink. The diode has a 125 °C maximum safe operating temperature. The peak forward voltage drop of 1N4595 is usually between 1 and 1.3 V, offering low power dissipation. Additionally, the diode has low-noise characteristics, making it suitable for low-voltage power supplies.

The PN junction of a 1N4595 rectifier diode, is made up of two layers of semiconductor material. One side of the junction is n-type, which is composed of donors, and the other side is p-type, made of acceptors. An electric field established between the n and p layers act as a diode, allowing the current to only flow in one direction. The p-type layer provides the anode, while the n-type layer provides the cathode connection. When a voltage is applied to the anode, electrons flow across the junction and into the p-type layer, while holes flow into the n-type layer. This process creates a barrier of opposite carriers to stop electrons from recombining and reduce the current.

Features

1N4595 rectifier diodes have high-frequency characteristics and a fast recovery time, making them ideal for high-frequency switch applications. The operating temperature range of the diode is between -55 °C and 125 °C, which ensures reliable operation even in high-temperature applications. The diode has a high reverse leakage current, which allows it to operate effectively at high forward bias voltages. Additionally, the diode has a low on-state voltage drop and a low junction capacitance that help reduce power dissipation. The 1N4595 also has a long service life, making it an ideal choice for applications that require reliability.

The 1N4595 rectifier diode is an excellent choice for a wide range of applications. It has fast recovery time, soft reverse recovery characteristics, and low-noise characteristics, making it ideal for low-voltage power supplies and other high-frequency switching applications. The diode offers extended heatsink capabilities, low-noise characteristics, and long-fan life, ensuring reliable and efficient operation. 1N4595 rectifier diodes are an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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