1N4623-1E3 Allicdata Electronics
Allicdata Part #:

1N4623-1E3-ND

Manufacturer Part#:

1N4623-1E3

Price: $ 2.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 4.3V 250MW DO35
More Detail: Zener Diode 4.3V 500mW ±5% Through Hole DO-35 (DO-...
DataSheet: 1N4623-1E3 datasheet1N4623-1E3 Datasheet/PDF
Quantity: 1000
400 +: $ 1.83567
Stock 1000Can Ship Immediately
$ 2.04
Specifications
Series: --
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.3V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 1600 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Description

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Diodes are the essential electrical components needed for a safe and reliable operation in any modern system due to their fast response time and low power requirements. When diodes are combined with other components, they can be used to provide protection against many electrical disturbances such as overload, short-circuit, overvoltage, and voltage transients. The 1N4623-1E3 diode is a single zener diode that offers a wide range of applications and a reliable working principle.

Applications of 1N4623-1E3 Zener Diode

The 1N4623-1E3 has a range of different applications. It can be used in overvoltage protection circuits, voltage regulator circuits, and power supply circuits. For overvoltage protection, the 1N4623-1E3 can be used as part of a cascade protection scheme to provide a reliable and efficient way of protecting sensitive equipment against transient voltages. For voltage regulation, the 1N4623-1E3 can be used to provide a stable operating voltage and current to electronic systems. In power supply circuits, the 1N4623-1E3 can be used to provide overvoltage protection or as part of a ripple filter.

Working Principle of 1N4623-1E3 Zener Diode

The 1N4623-1E3 working principle is based on a dynamic avalanche breakdown process. When a reverse voltage is applied across the device, it controls the current flow. The breakdown voltage is determined by the device\'s characteristics. The threshold voltage depends on the device\'s design and is typically between 7.0 and 8.0 volts. The breakdown voltage is also dependent on the temperature of the operating environment. A higher temperature increases the breakdown voltage.

The 1N4623-1E3 has a low dynamic on-state resistance, which is beneficial in applications where high power dissipation is required. It also operates with a low reverse recovery time, which helps to minimise voltage transients. The 1N4623-1E3 has a low power consumption, making it an ideal choice for applications where minimal power consumption is required.

Advantages of 1N4623-1E3 Zener Diode

The 1N4623-1E3 offers a range of benefits, making it an ideal choice for different applications. It has a low power consumption, making it an efficient choice for low power applications. The 1N4623-1E3 also has a low capacitance and a low dynamic on-state resistance, making it suitable for high power applications. The 1N4623-1E3 is also low cost, making it an ideal choice for cost-sensitive applications. The 1N4623-1E3 also has a high reverse breakdown voltage, providing reliable protection against transient voltages.

Conclusion

The 1N4623-1E3 is a single zener diode that offers a wide range of applications and a reliable working principle. The 1N4623-1E3 can be used in a variety of applications, including overvoltage protection, voltage regulation, and power supply circuits. The 1N4623-1E3 works by controlling the current flow through the device when a reverse voltage is applied across it. The 1N4623-1E3 has a low power consumption, making it an ideal choice for low power applications. It also has a low dynamic on-state resistance and a low capacitance, making it suitable for high power applications. The 1N4623-1E3 also has a high reverse breakdown voltage, providing reliable protection against transient voltages.

The specific data is subject to PDF, and the above content is for reference

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