1N4935GHB0G

Diodes - Rectifiers - Single

The 1N4935GHB0G is a silicon-based diode rectifier, featuring high forward current and reverse voltage ratings. It has a peak reverse recovery time of 7 ns, allowing for fast switching in high frequency applications. This diode is often the device of choice for high voltage power supplies and other applications that require a quick, reliable switch.

Application Field

The 1N4935GHB0G is a common choice as a rectifier in high voltage power supplies. It can serve as the switching element in a wide variety of equipment, including photovoltaic cells, motor controllers, and various other applications that require reliable rectification. Its low reverse leakage current also makes it suitable for low voltage applications, as it can provide high current at low voltages.

Working Principle

The 1N4935GHB0G operates using the same basic principle as any other diode rectifier. When forward-biased, current can flow from the anode to the cathode. When reverse-biased, no current flows and the device is effectively disconnected from the circuit. This allows the device to switch between two different voltage states cleanly and quickly.

The 1N4935GHB0G also includes some extra features. Its low reverse leakage current, mentioned earlier, allows it to be used in low voltage applications. It also includes internal protection against overvoltage and overcurrent, making it a great choice for automotive applications. Finally, it has a fast surge capability, which allows it to withstand short-term surges in current without damage.

Conclusion

The 1N4935GHB0G is a reliable Silicon diode rectifier from ON Semiconductor, suitable for use in high voltage, low voltage and automotive applications. Its high forward current and reverse voltage ratings, coupled with its low reverse leakage current, makes it perfect for applications requiring a rapid, reliable switch.