1N4942GP-E3/73 Allicdata Electronics

1N4942GP-E3/73 Discrete Semiconductor Products

Allicdata Part #:

1N4942GP-E3/73-ND

Manufacturer Part#:

1N4942GP-E3/73

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 1A DO204AL
More Detail: Diode Standard 200V 1A Through Hole DO-204AL (DO-4...
DataSheet: 1N4942GP-E3/73 datasheet1N4942GP-E3/73 Datasheet/PDF
Quantity: 1000
12000 +: $ 0.05535
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Box (TB) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N4942
Description

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The 1N4942GP-E3/73 Diode is a Single Rectifier, a type of diode which is the most common and fundamental type of diode available and widely used in electrical and electronic circuits. This device has specific ideal properties that make it suitable for many uses, such as rectification, voltage regulation, protection of sensitive components, and as a switching device for low power applications.

A rectifier diode is relatively simple in construction, and consists of a p-type and an n-type semiconductor material sandwiched together. This junction is known as the ‘diode junction’. The 1N4942GP-E3/73 is constructed from a gallium-arsenide semiconductor material, which gives it a low reverse leakage current. It has an encapsulated package, with a tantalum anode and an aluminum cathode.

The main application fields of the 1N4942GP-E3/73 diode are reverse recovery, ESD protection, and voltage clamping applications. The device is ideal for these applications because of its high reverse recovery time, high reverse operating voltage, low on-state voltage drop, low reverse leakage current, and high surge current. This diode can be used both in negative and positive voltage levels.

In operation, a single rectifier diode can only conduct current in one direction, thereby making it suitable for circuits that require rectification, or the conversion of alternating current into direct current. When the diode is forward biased, which occurs when the anode is more positive than the cathode, electrons are injected from the n-type material into the p-type material, and the device becomes forward biased. When this happens, the semiconductor junction is able to conduct current from anode to cathode.

In reverse bias, which occurs when the cathode is more positive than the anode, the diode does not conduct current. In this circuit, the majority carriers in the p-type and n-type layer are swept far away from the junction and do not conduct current. This makes the 1N4942GP-E3/73 a useful device to protect other components or devices from electrical shock or overvoltage conditions.

The 1N4942GP-E3/73 is a valuable device for many applications due to its simple structure, low cost, and wide voltage range. It has very low forward voltage drop and its reverse recovery time is very high, which makes it suitable for reverse recovery applications. Its maximum Surge current is 2 amps, which makes it suitable for limiting short duration peak current. Lastly, its package allows the device to dissipate any heat produced, ensuring safe operation.

The specific data is subject to PDF, and the above content is for reference

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