Allicdata Part #: | 2N2369AUB-ND |
Manufacturer Part#: |
2N2369AUB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 15V SMD |
More Detail: | Bipolar (BJT) Transistor NPN 15V 360mW Surface M... |
DataSheet: | 2N2369AUB Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 400nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 100mA, 1V |
Power - Max: | 360mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD |
Supplier Device Package: | SMD |
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The 2N2369AUB is a bipolar junction transistor (BJT) with a single PNP type that is widely used for high-power amplifier and switching applications. It is well-suited for use in heater control, relay driving, high-current switching, and audio amplifier applications.
The 2N2369AUB features a Broadband Frequency Response from 10 MHz - 1 GHz, Low Cost, Low On-Resistance, High Voltage, and is proven to be highly efficient and dependable. In addition, it has two leads that connect to the collector and emitter junctions respectively.
The 2N2369AUB is also known as an NPN transistor, and its construction consists of three layers arranged in a sandwich configuration. The bottom layer is the emitter and the second layer is the base. The collector is at the top layer. Each layer has a special purpose. The emitter carries the majority charge carriers, while the base is made of semiconductor material and is responsible for controlling the flow of electrons between the emitter and the collector. The collector collects the charge carriers to form the output current of the transistor.
The working principle of the 2N2369AUB is based on the flow of electrons through a semiconductor material. It uses a base-emitter junction, which is a diode in essence, and an NPN transistor. A base-emitter junction is formed when an N-type semiconductor is coupled to a P-type semiconductor. This junction allows a current to flow from the N-type to the P-type, which is called forward bias. When this current is induced, it allows electrons and holes to cross-over from the N-region to the P-region, known as recombination.
When a voltage is applied to the base terminal of the transistor, the electrons will enter the base-collector junction and this will cause the transistor to switch on. When the voltage is removed, the transistor switches off. Another factor that affects the switching time of the transistor is the collector-emitter current, which must be kept constant when attempting to maintain a constant collector voltage.
Overall, the 2N2369AUB is a versatile and dependable device for a wide range of high-power amplifier and switching applications. It offers a great combination of high power, low cost, and wide bandwidth, making it an attractive solution for numerous applications. In addition, the 2N2369AUB is easy to use, with its two-leads connection and straightforward on-off logic. It is well-suited for use in heater control, relay driving, high-current switching, and audio amplifier applications, offering a long-term reliable solution and maximum cost savings.
The specific data is subject to PDF, and the above content is for reference
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2N2323A | Microsemi Co... | 0.0 $ | 1000 | DIODE SILICON CTRLSCR S... |
2N2323AS | Microsemi Co... | 0.0 $ | 1000 | SCR 50V 20UA TO205AASCR 5... |
2N2323AU4 | Microsemi Co... | 0.0 $ | 1000 | SCR 50V 20UA 3SMDSCR 50V ... |
2N2323U4 | Microsemi Co... | 0.0 $ | 1000 | SCR 50V 200UA 3SMDSCR 50V... |
2N2324 | Microsemi Co... | 0.0 $ | 1000 | SCR 100V 200UA TO205AASCR... |
2N2324A | Microsemi Co... | 0.0 $ | 1000 | SCR 100V 20UA TO205AASCR ... |
2N2324AS | Microsemi Co... | 0.0 $ | 1000 | SCR 100V 20UA TO205AASCR ... |
2N2324AU4 | Microsemi Co... | 0.0 $ | 1000 | SCR 100V 20UA 3SMDSCR 100... |
2N2324S | Microsemi Co... | 0.0 $ | 1000 | SCR 100V 200UA TO205AASCR... |
2N2324U4 | Microsemi Co... | 0.0 $ | 1000 | SCR 100V 200UA 3SMDSCR 10... |
2N2325 | Microsemi Co... | 0.0 $ | 1000 | SCR 150V 200UA TO205ADSCR... |
2N2325A | Microsemi Co... | 0.0 $ | 1000 | SCR 150V 20UA TO205ADSCR ... |
2N2325AS | Microsemi Co... | 0.0 $ | 1000 | SCR 150V 20UA TO205ADSCR ... |
2N2325AU4 | Microsemi Co... | 0.0 $ | 1000 | SCR 150V 20UA 3SMDSCR 150... |
2N2325S | Microsemi Co... | 0.0 $ | 1000 | SCR 150V 200UA TO205ADSCR... |
2N2325U4 | Microsemi Co... | 0.0 $ | 1000 | SCR 150V 200UA 3SMDSCR 15... |
2N2326 | Microsemi Co... | 0.0 $ | 1000 | SCR 200V 200UA TO205AASCR... |
2N2326A | Microsemi Co... | 0.0 $ | 1000 | SCR 200V 20UA TO205AASCR ... |
2N2326AS | Microsemi Co... | 0.0 $ | 1000 | SCR 200V 20UA TO205AASCR ... |
2N2326AU4 | Microsemi Co... | 0.0 $ | 1000 | SCR 200V 20UA 3SMDSCR 200... |
2N2326S | Microsemi Co... | 0.0 $ | 1000 | SCR 200V 200UA TO205AASCR... |
2N2326U4 | Microsemi Co... | 0.0 $ | 1000 | SCR 200V 200UA 3SMDSCR 20... |
2N2328 | Microsemi Co... | 0.0 $ | 1000 | SCR 300V 200UA TO205AASCR... |
2N2328A | Microsemi Co... | 0.0 $ | 1000 | SCR 300V 20UA TO205AASCR ... |
2N2328AS | Microsemi Co... | 0.0 $ | 1000 | SCR 300V 20UA TO205AASCR ... |
2N2328AU4 | Microsemi Co... | 0.0 $ | 1000 | SCR 300V 20UA 3SMDSCR 300... |
2N2328U4 | Microsemi Co... | 0.0 $ | 1000 | SCR 300V 200UA 3SMDSCR 30... |
2N2329A | Microsemi Co... | 0.0 $ | 1000 | SCR 400VSCR 400V Sensiti... |
2N2329AS | Microsemi Co... | 0.0 $ | 1000 | SCR 400VSCR 400V Sensiti... |
2N2329AU4 | Microsemi Co... | 0.0 $ | 1000 | SCR 400V 3SMDSCR 400V Se... |
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