Allicdata Part #: | 2N2326AU4-ND |
Manufacturer Part#: |
2N2326AU4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | SCR 200V 20UA 3SMD |
More Detail: | SCR 200V Sensitive Gate Surface Mount U4 |
DataSheet: | 2N2326AU4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/276 |
Packaging: | Bulk |
Part Status: | Obsolete |
Voltage - Off State: | 200V |
Voltage - Gate Trigger (Vgt) (Max): | 600mV |
Current - Gate Trigger (Igt) (Max): | 20µA |
Current - On State (It (AV)) (Max): | 220mA |
Current - Hold (Ih) (Max): | 2mA |
Current - Non Rep. Surge 50, 60Hz (Itsm): | -- |
SCR Type: | Sensitive Gate |
Operating Temperature: | -65°C ~ 125°C |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | U4 |
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Thyristors - SCRs (Silicon Controlled Rectifiers) are a well-known and heavily used type of electronic components. The 2N2326AU4 is an example of such a device, commonly used for power regulation, switching and amplification. This article will provide an overview of the application fields and the working principle of the 2N2326AU4.
Applications of 2N2326AU4
2N2326AU4 Thyristors - SCRs are designed for a wide range of applications. The device is most commonly used in switching and power control circuits. It is well-suited for power converters, DC servo motors, DC-DC converters, phase control circuits, and low- voltage power supply applications. It is also used in temperature controllers, AC line phase control, and loudspeaker protectors. The 2N2326AU4 has a wide operating temperature range, high surge current capabilities and long off-state durations. Its maximum reverse current and low dynamic on-state resistance make it an ideal solution for power regulation, switching, and amplification in commercial, residential and industrial applications.
Working Principle of 2N2326AU4
2N2326AU4 thyristors - SCRs are a kind of semiconductor device based on the 3-layer construction principle. The diode is formed by the two P-N junctions, follow by the two surfaces between the N- and P-type layers. When external voltage is applied, electrons will flow from the N-type layer to the P-type layer, resulting in the formation of a surface layer of charge carriers in the depletion zone. This zone can be used to control the conduction of current. The external voltage required to trigger the 2N2326AU4 is called the "gate-trigger voltage" and must exceed the forward breakover voltage of the device. After the external voltage exceeds the trigger voltage, the surface charge is "injected" into the depletion region and the device begins to conduct. This process is called the forward-biased conduction and it sustains until the voltage drops below the required threshold.
When the current through the 2N2326AU4 exceeds the rated value, the device begins to conduct in the reverse direction. This process is called the reverse-biased conduction and it takes place until the current drops below the rated value. This process protects the device from harm due to the overcurrent condition.
The 2N2326AU4 thyristor - SCR is an easy-to-use and reliable device for controlling the power in various applications. It has excellent surge handling capability, high operational temperature range, and low on-state resistance.
The specific data is subject to PDF, and the above content is for reference
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