2N2369A Discrete Semiconductor Products

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	15V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 10mA, 350mV
Power - Max:	360mW
Frequency - Transition:	500MHz
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AA, TO-18-3 Metal Can
Supplier Device Package:	TO-18

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - Single2N2369A is a low-power bipolar NPN(negative-positive-negative) small-signal transistor. This type of transistor is an active component used in many circuit applications such as amplifying and switching. The 2N2369A is an affordable choice of a low-power NPN transistor with a low current gain.2N2369A is commonly used in applications such as amplifying low-power audio signals, amplifying and switching analog or digital signals, modulating high frequency signals, and amplifying video signals. It is also often used in circuits requiring an antenna, so long as the device is shielded. Widely used in radio receivers, preamplifiers, converters, and amplifiers, the 2N2369A is a helpful tool for many electronics applications.The 2N2369A is a versatile device for small signal applications and is complementary to the PNP(positive-negative-positive) counterpart, the BFR69A. This type of transistor is a three-layer device that has two PN junctions. A PN junction is a semiconductor diode structure that has one layer of electrons and one layer of holes. This junction is designed in such a way that electrons can flow from the N-type layer to the P-type layer and holes can flow from the P-type layer to the N-type layer.The 2N2369A has a low collector-emitter saturation voltage, which makes it suitable for low-power applications. The device also has a low collector-base breakdown voltage and is capable of working up to a maximum voltage of 25V. It has a low thermal resistance and is able to withstand up to 8.0A in continuous base current.Most transistors, including the 2N2369A, require DC biasing for proper operation. DC biasing is a technique used to establish the operating point for the collector current. This biasing can be achieved by using a resistor or a capacitor in combination with a resistive voltage divider, depending on the desired bias voltage.The 2N2369A can be used in many circuits and applications, but one of its greatest advantages is its low noise figure. This makes it extremely effective in low-noise applications in which noise can be a significant issue. It is also very efficient in switching and amplifying radio frequency signals.In order to make 2N2369A transistors reliable, they must be soldered correctly. For example, they should not be exposed to temperatures that are too high, and they should be soldered to the board with a low-temperature solder. It is also important to ensure that the components used in the circuit match the specifications of the transistor to make sure that the device does not become damaged.Overall, the 2N2369A is a reliable and versatile transistor for many different types of applications and circuits. Although it is a low-power device, the 2N2369A has the ability to help produce an exponentially higher output signal than the signal sent to it. It is also an affordable choice of a low-power NPN transistor with a modest current gain.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description