2N3904_J05Z Allicdata Electronics
Allicdata Part #:

2N3904_J05Z-ND

Manufacturer Part#:

2N3904_J05Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.2A TO-92
More Detail: Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625m...
DataSheet: 2N3904_J05Z datasheet2N3904_J05Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N3904
Description

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Introduction: The 2N3904_J05Z is a bipolar transistor, with a high breakdown voltage and low power operating characteristics, making it ideal for use in consumer electronic applications. This application note provides an overview of the 2N3904_J05Z, focusing on its application fields and working principle.

Application Field

The 2N3904_J05Z is a NPN transistor, and it’s mainly used for switching and amplification in consumer electronic devices such as radios, televisions, amplifiers and audio equipment. The transistor can handle up to 200mA of continuous current and has a voltage gain of between 120 and 500, making it ideal for general purpose switching tasks. Its high breakdown voltage also makes it suitable for higher voltage applications such as high voltage power supplies.

The 2N3904_J05Z is frequently used in amplifier oscillator circuits, as its large amplification factor makes it an ideal choice for power amplification of audio signals from radios and televisions. Its low power operating characteristics also make it suitable for smaller circuits, where it is used for light intensity control, voltage regulation and current limiting.

Working Principle

The 2N3904_J05Z operates using a basic two-layer NPN transistor structure, using a single emitter, collector and base. The transistor acts as a four-layer diode with an applied voltage across its base and collector. As the base-collector voltage increases, more electrons are injected into the base region which flows into the collector. This produces a current through the collector-emitter, allowing current to flow from the collector to the emitter, thus amplifying the input signal.

The base-emitter diode of the 2N3904_J05Z is used to control the base voltage, which is necessary to ensure that the transistor is not over-biased. The collector-base diode junction is also used as a region for controlling the other voltage. When reverse-biased, the transistor will switch off, blocking any current from flowing through the collector-emitter junction.

Finally, the transistor’s collector current will be proportional to the base current, allowing the transistor to accurately control the output current and the other characteristics of the amplifier or switching circuit, making it ideal for a range of consumer electronic applications.

In summary, the 2N3904_J05Z is a NPN bipolar transistor, with a wide range of application fields and a working principle of two-layer NPN transistor structure, which can be used to accurately control the output signal, amplifier and other consumer electronic applications.

The specific data is subject to PDF, and the above content is for reference

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