2N3905TAR Allicdata Electronics
Allicdata Part #:

2N3905TAR-ND

Manufacturer Part#:

2N3905TAR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 0.2A TO-92
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 625mW Thro...
DataSheet: 2N3905TAR datasheet2N3905TAR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N3905
Description

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The 2N3905TAR is a bipolar, single transistor device with a variety of applications. As a general purpose one, it is used in many consumer electronics such as amplifiers, audio equipment, and various other consumer appliances. It has a small package size which makes it attractive for use in consumer electronics applications. It is also used for high frequency oscillator circuits, as well as for frequency modulation (FM).

The 2N3905TAR has a PNP configuration, which means that it has a base E-B junction, a collector and an emitter. The base junction is used to control current and voltage, while the collector and emitter are used to control current. The base and the emitter both have their own leads. When the transistor is switched on, the current flows from the collector to the emitter. The collector is connected to the power supply voltage, and the emitter is connected to ground.

The 2N3905TAR has a maximum DC current gain of 400, a maximum DC voltage gain of 200, and a maximum power dissipation of 800 mW. It is suitable for operation in either the NPN or PNP configurations, and is rated for a maximum operating temperature of 200oC. The 2N3905TAR has a relatively small package size, making it ideal for use in consumer electronic applications.

The working principle of the 2N3905TAR is based on the two junctions (EB and CE) which are responsible for controlling the current flow. When the transistor is turned on, the collector current will start flowing, and in the process the base junction will be charged. This will cause the collector to be more positively charged than the emitter, creating a voltage drop across the EB junction. This voltage drop is responsible for controlling the current flow in the transistor. The larger the base current, the larger the collector current, thus allowing for greater current control.

The 2N3905TAR offers excellent performance and reliability, making it an attractive choice for a variety of applications. It is used in many consumer electronics, as well as for high frequency oscillator circuits and frequency modulation. Its small package size helps reduce the size of the circuit design, while its high current gain and power dissipation capabilities make it an ideal choice for many applications that require precise current control.

The specific data is subject to PDF, and the above content is for reference

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