Allicdata Part #: | 2N3906_D27ZS00Z-ND |
Manufacturer Part#: |
2N3906_D27ZS00Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625m... |
DataSheet: | 2N3906_D27ZS00Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N3906 |
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Transistors are electronic components that are used to amplify or switch electronic signals. The 2N3906_D27ZS00Z transistor is a bipolar junction transistor (BJT) that belongs to the single type.
The 2N3906_D27ZS00Z has a wide range of applications. It is used for general purpose medium power switching and amplifying. It is used for interfacing between low level analog signals and digital circuits. It can also be used as a current limiter to protect other components, such as high voltage components, from excessive current.
The 2N3906_D27ZS00Z has an integral power source, making it self-sufficient and easy to use. The power source is connected to the collector, allowing current to flow from collector to emitter. This current can then be fed into other components, such as a load, providing current to it.
The 2N3906_D27ZS00Z also has an autonomous base-emitter region, which allows it to function as an amplifier. This region consists of a forward biased diode, which allows current to flow from base to emitter. This current then passes through a bias voltage, causing the collector to become more positively charged and the emitter to become more negatively charged. This change in voltage causes the base current to decrease further increasing the current through the collector.
The 2N3906_D27ZS00Z also has a built in protection feature against voltage spikes. It is designed with an avalanche region that quickly dissipates any excess voltage that is passed through the transistor, preventing it from being damaged.
The 2N3906_D27ZS00Z is a versatile component, capable of switching and amplifying a wide range of signals. It has a wide range of applications, from low-level analog signal processing to high-voltage protection. Its integrated power source, autonomous base-emitter region, and built-in protection make it an ideal component for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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